Skip to main navigation Skip to search Skip to main content

Synthesis of boron carbonitride films by plasma-based ion implantation

  • Shuyan Xu*
  • , Xinxin Ma
  • , Mingren Sun
  • *Corresponding author for this work
  • Harbin Institute of Technology

Research output: Contribution to journalConference articlepeer-review

Abstract

BCN films were prepared with unbalanced magnetron sputtering boron carbide film followed by nitrogen plasma-based ion implantation at different voltages on Si substrate. The implantation voltages vary from 10 kV to 50 kV. The chemical states of B, C and N of the films were studied with X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR). The nano-hardness and elastic modulus of films were measured by Nano-Indenter. The results showed that amorphous BCN films formed in the nitrogen implanted layer. The amorphous peak becomes obvious with increasing of the implanted voltage when the voltage is under of 40 kV. The Nano-Indenter measurement showed that the B-C bond content and the disorder degree affect the hardness and modulus.

Original languageEnglish
Pages (from-to)1850-1853
Number of pages4
JournalKey Engineering Materials
Volume353-358
Issue numberPART 3
DOIs
StatePublished - 2007
Externally publishedYes
EventAsian Pacific Conference for Fracture and Strength (APCFS'06) - Sanya, Hainan Island, China
Duration: 22 Nov 200625 Nov 2006

Keywords

  • BCN
  • Chemical state
  • Mechanical properties
  • Plasma-based ion implantation mixing

Fingerprint

Dive into the research topics of 'Synthesis of boron carbonitride films by plasma-based ion implantation'. Together they form a unique fingerprint.

Cite this