Synthesis and growth of GaSe single crystals

Chongqiang Zhu; Zuotao Lei; Liangcheng Song; Tianhui Ma; Chunhui Yang

doi:10.1016/j.jcrysgro.2015.02.029

Synthesis and growth of GaSe single crystals

Chongqiang Zhu
, Zuotao Lei
, Liangcheng Song
, Tianhui Ma
, Chunhui Yang^*

^*Corresponding author for this work

School of Chemistry and Chemical Engineering, Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

Abstract One-temperature and two-temperature synthesis methods for GaSe, a nonlinear optical compound, were developed. X-ray diffraction showed that pure α-GaSe was synthesized. By Vertical Bridgman method using spontaneous nucleation the GaSe single crystals were grown with diameter 20-25 mm and length 40-45 mm and yield ~60%. The rocking curve for the studied GaSe sample was symmetric and its FWHM did not exceed 3′, which corresponds to the dislocation density at the level of 10¹²-10¹³ cm^-2. SEM showed imperfections of surface of non-etched cleaved GaSe. According the obtained data the absorption coefficient at 1.06 μm and 2 μm is ~0.1 cm^-1. At 9.3-10.9 μm for nonpolarized light the calculations give absorption coefficient ~0.1-0.12 cm^-1.

Original language	English
Article number	22673
Pages (from-to)	53-57
Number of pages	5
Journal	Journal of Crystal Growth
Volume	421
DOIs	https://doi.org/10.1016/j.jcrysgro.2015.02.029
State	Published - 1 Jul 2015
Externally published	Yes

Keywords

A1. Characterization
A1. X-ray diffraction
A2. Bridgman technique
A2. Single crystal growth
B2. Nonlinear optic materials
B2. Semiconducting gallium compounds

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10.1016/j.jcrysgro.2015.02.029

Cite this

@article{4186db9a8ecf4114b1ea0ec4702f03b6,

title = "Synthesis and growth of GaSe single crystals",

abstract = "Abstract One-temperature and two-temperature synthesis methods for GaSe, a nonlinear optical compound, were developed. X-ray diffraction showed that pure α-GaSe was synthesized. By Vertical Bridgman method using spontaneous nucleation the GaSe single crystals were grown with diameter 20-25 mm and length 40-45 mm and yield \textasciitilde{}60\%. The rocking curve for the studied GaSe sample was symmetric and its FWHM did not exceed 3′, which corresponds to the dislocation density at the level of 1012-1013 cm-2. SEM showed imperfections of surface of non-etched cleaved GaSe. According the obtained data the absorption coefficient at 1.06 μm and 2 μm is \textasciitilde{}0.1 cm-1. At 9.3-10.9 μm for nonpolarized light the calculations give absorption coefficient \textasciitilde{}0.1-0.12 cm-1.",

keywords = "A1. Characterization, A1. X-ray diffraction, A2. Bridgman technique, A2. Single crystal growth, B2. Nonlinear optic materials, B2. Semiconducting gallium compounds",

author = "Chongqiang Zhu and Zuotao Lei and Liangcheng Song and Tianhui Ma and Chunhui Yang",

year = "2015",

month = jul,

day = "1",

doi = "10.1016/j.jcrysgro.2015.02.029",

language = "英语",

volume = "421",

pages = "53--57",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Synthesis and growth of GaSe single crystals

AU - Zhu, Chongqiang

AU - Lei, Zuotao

AU - Song, Liangcheng

AU - Ma, Tianhui

AU - Yang, Chunhui

PY - 2015/7/1

Y1 - 2015/7/1

N2 - Abstract One-temperature and two-temperature synthesis methods for GaSe, a nonlinear optical compound, were developed. X-ray diffraction showed that pure α-GaSe was synthesized. By Vertical Bridgman method using spontaneous nucleation the GaSe single crystals were grown with diameter 20-25 mm and length 40-45 mm and yield ~60%. The rocking curve for the studied GaSe sample was symmetric and its FWHM did not exceed 3′, which corresponds to the dislocation density at the level of 1012-1013 cm-2. SEM showed imperfections of surface of non-etched cleaved GaSe. According the obtained data the absorption coefficient at 1.06 μm and 2 μm is ~0.1 cm-1. At 9.3-10.9 μm for nonpolarized light the calculations give absorption coefficient ~0.1-0.12 cm-1.

AB - Abstract One-temperature and two-temperature synthesis methods for GaSe, a nonlinear optical compound, were developed. X-ray diffraction showed that pure α-GaSe was synthesized. By Vertical Bridgman method using spontaneous nucleation the GaSe single crystals were grown with diameter 20-25 mm and length 40-45 mm and yield ~60%. The rocking curve for the studied GaSe sample was symmetric and its FWHM did not exceed 3′, which corresponds to the dislocation density at the level of 1012-1013 cm-2. SEM showed imperfections of surface of non-etched cleaved GaSe. According the obtained data the absorption coefficient at 1.06 μm and 2 μm is ~0.1 cm-1. At 9.3-10.9 μm for nonpolarized light the calculations give absorption coefficient ~0.1-0.12 cm-1.

KW - A1. Characterization

KW - A1. X-ray diffraction

KW - A2. Bridgman technique

KW - A2. Single crystal growth

KW - B2. Nonlinear optic materials

KW - B2. Semiconducting gallium compounds

UR - https://www.scopus.com/pages/publications/84928791584

U2 - 10.1016/j.jcrysgro.2015.02.029

DO - 10.1016/j.jcrysgro.2015.02.029

M3 - 文章

AN - SCOPUS:84928791584

SN - 0022-0248

VL - 421

SP - 53

EP - 57

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

M1 - 22673

ER -

Synthesis and growth of GaSe single crystals

Abstract

Keywords

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