Synergistic Mechanisms of Ionizing/Displacement Damage in Silicon BJTs: Review and Prospects

The combined influence of ionization and displacement phenomena within the space radiation environment has spurred considerable investigation into the synergistic impacts of ionization and displacement damage on bipolar transistors. Prior research has largely concentrated on the interactions between specific ionizing defects and displacement defects, such as the interplay between oxide trap charges or interface traps and bulk displacement defects, which may present challenges for subsequent researchers. Building upon existing research, this article reviews the causes and mechanisms of the synergistic effects of ionizing/displacement damage in silicon-based bipolar transistors from a qualitative standpoint, categorizing these mechanisms into indirect and direct interactions. Indirect interactions encompass the interplay between oxide trap charges or interface traps in the oxide layer and displacement defects in the silicon bulk, while direct interactions involve the relationships between displacement defects in the oxide layer and ionizing defects, as well as the interactions between ionizing and bulk displacement defects within the silicon bulk. The concluding section of this study identifies areas warranting further investigation, including the characterization of the evolution of additional synergistic damage defects, the development of cross-scale (“material-device”) technology computer aided design (TCAD) simulations, and the establishment of quantitative physical models for the synergistic effects of damage.