TY - GEN
T1 - Switching Characterization of SiC MOSFETs in Three-Level Active Neutral-Point-Clamped Inverter Application
AU - Chen, Mengxing
AU - Pan, Donghua
AU - Wang, Huai
AU - Wang, Xiongfei
AU - Blaabjerg, Frede
AU - Wang, Wei
N1 - Publisher Copyright:
© 2019 The Korean Institute of Power Electronics (KIPE).
PY - 2019/5
Y1 - 2019/5
N2 - The switching characterization of power devices is critical for improving the efficiency and reliability of power electronic converters. In this paper, the switching characteristics of silicon carbide (SiC) MOSFETs in a three-level active neutral-point-clamped (3L-ANPC) inverter are investigated. A parasitic model of the 3L-ANPC phase-leg is proposed first based on a design case and its ANSYS/Q3D simulation. Then, two typical commutation modes for ANPC inverters, namely the outer mode and the inner mode, are studied, and the separate switching loops and parasitic inductances are identified according to the parasitic model. Knowing this, double-pulse tests (DPTs) for each type of commutation are conducted. The differences in terms of switching characteristics and switching dissipations are fully revealed. The conclusion drawn can be utilized for developing the next-generation highly efficient and reliable SiC MOSFET based 3L-ANPC inverters.
AB - The switching characterization of power devices is critical for improving the efficiency and reliability of power electronic converters. In this paper, the switching characteristics of silicon carbide (SiC) MOSFETs in a three-level active neutral-point-clamped (3L-ANPC) inverter are investigated. A parasitic model of the 3L-ANPC phase-leg is proposed first based on a design case and its ANSYS/Q3D simulation. Then, two typical commutation modes for ANPC inverters, namely the outer mode and the inner mode, are studied, and the separate switching loops and parasitic inductances are identified according to the parasitic model. Knowing this, double-pulse tests (DPTs) for each type of commutation are conducted. The differences in terms of switching characteristics and switching dissipations are fully revealed. The conclusion drawn can be utilized for developing the next-generation highly efficient and reliable SiC MOSFET based 3L-ANPC inverters.
KW - ANPC inverter
KW - And switching characterization
KW - Parasitic inductance
KW - SiC MOSFET
UR - https://www.scopus.com/pages/publications/85071650558
M3 - 会议稿件
AN - SCOPUS:85071650558
T3 - ICPE 2019 - ECCE Asia - 10th International Conference on Power Electronics - ECCE Asia
SP - 1793
EP - 1799
BT - ICPE 2019 - ECCE Asia - 10th International Conference on Power Electronics - ECCE Asia
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 10th International Conference on Power Electronics - ECCE Asia, ICPE 2019 - ECCE Asia
Y2 - 27 May 2019 through 30 May 2019
ER -