Surface and interface characteristic of sputtered nanometer PtSi film

Jinghua Yin; Wei Cai; Mingguang Wang; Yufeng Zheng; Meicheng Li; Peilin Wang; Liancheng Zhao

Surface and interface characteristic of sputtered nanometer PtSi film

Jinghua Yin^*
, Wei Cai
, Mingguang Wang
, Yufeng Zheng
, Meicheng Li
, Peilin Wang
, Liancheng Zhao

^*Corresponding author for this work

Harbin University of Science and Technology
Harbin Institute of Technology
CAS - Institute of Metal Research

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The 5nm Pt films are deposited on p-Si (111) substrate by magnetron sputtering. After annealing, Pt films turn into PtSi. The characteristic of surface and interface of PtSi films are studied by AFM and HRTEM. The results show that the technology conditions influence the interface structure and surface morphology of PtSi films. With an increase of substrate temperature, the columnar clusters on the surface become into the flat ones, and multi-layer films to be the single ones. If the substrate are heated, there are only PtSi phase in the single layer film that is uniform and sound and has a smooth, clear and coherent interface.

Original language	English
Pages (from-to)	74-77
Number of pages	4
Journal	Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume	24
Issue number	SUPPL.
State	Published - May 2003
Externally published	Yes

Keywords

Interface structure
PtSi film
Surface morphology

Cite this

@article{29ae36dd015247a0881fd5da31c6b255,

title = "Surface and interface characteristic of sputtered nanometer PtSi film",

abstract = "The 5nm Pt films are deposited on p-Si (111) substrate by magnetron sputtering. After annealing, Pt films turn into PtSi. The characteristic of surface and interface of PtSi films are studied by AFM and HRTEM. The results show that the technology conditions influence the interface structure and surface morphology of PtSi films. With an increase of substrate temperature, the columnar clusters on the surface become into the flat ones, and multi-layer films to be the single ones. If the substrate are heated, there are only PtSi phase in the single layer film that is uniform and sound and has a smooth, clear and coherent interface.",

keywords = "Interface structure, PtSi film, Surface morphology",

author = "Jinghua Yin and Wei Cai and Mingguang Wang and Yufeng Zheng and Meicheng Li and Peilin Wang and Liancheng Zhao",

year = "2003",

month = may,

language = "英语",

volume = "24",

pages = "74--77",

journal = "Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors",

issn = "0253-4177",

publisher = "Kexue Chubaneshe/Science Press",

number = "SUPPL.",

}

TY - JOUR

T1 - Surface and interface characteristic of sputtered nanometer PtSi film

AU - Yin, Jinghua

AU - Cai, Wei

AU - Wang, Mingguang

AU - Zheng, Yufeng

AU - Li, Meicheng

AU - Wang, Peilin

AU - Zhao, Liancheng

PY - 2003/5

Y1 - 2003/5

N2 - The 5nm Pt films are deposited on p-Si (111) substrate by magnetron sputtering. After annealing, Pt films turn into PtSi. The characteristic of surface and interface of PtSi films are studied by AFM and HRTEM. The results show that the technology conditions influence the interface structure and surface morphology of PtSi films. With an increase of substrate temperature, the columnar clusters on the surface become into the flat ones, and multi-layer films to be the single ones. If the substrate are heated, there are only PtSi phase in the single layer film that is uniform and sound and has a smooth, clear and coherent interface.

AB - The 5nm Pt films are deposited on p-Si (111) substrate by magnetron sputtering. After annealing, Pt films turn into PtSi. The characteristic of surface and interface of PtSi films are studied by AFM and HRTEM. The results show that the technology conditions influence the interface structure and surface morphology of PtSi films. With an increase of substrate temperature, the columnar clusters on the surface become into the flat ones, and multi-layer films to be the single ones. If the substrate are heated, there are only PtSi phase in the single layer film that is uniform and sound and has a smooth, clear and coherent interface.

KW - Interface structure

KW - PtSi film

KW - Surface morphology

UR - https://www.scopus.com/pages/publications/0041826825

M3 - 文章

AN - SCOPUS:0041826825

SN - 0253-4177

VL - 24

SP - 74

EP - 77

JO - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

JF - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

IS - SUPPL.

ER -

Surface and interface characteristic of sputtered nanometer PtSi film

Abstract

Keywords

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