Abstract
The dynamic process of nonlinear absorption in a semiconductor medium caused by nonlinear optical pulse propagation under nonresonant condition was studied. The threshold intensity formula was derived under the limit of small absorption, which describes the relative size of two-photon absorption and free carrier absorption. The effect of the sample thickness on the threshold intensity was analyzed. The main origin of the great disparity in the measured values of two-photon absorption coefficient of GaAs was explained.
| Original language | English |
|---|---|
| Pages (from-to) | 309-312 |
| Number of pages | 4 |
| Journal | Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves |
| Volume | 15 |
| Issue number | 4 |
| State | Published - Aug 1996 |
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