Abstract
The application of thermoelectric films is limited to retain the temperature gradient. In this study, the Bi-Te films are deposited on the AAO template with a pore size of 100 nm using thermal evaporation. The results show that the conductive types of the Bi-Te film are tuned by source temperature. The power factor of the p-type porous film decreases 36% by comparing to that of the p-type nonporous film (1020 μW/mK2 at 250 °C). Meanwhile, the temperature difference in the porous device is maintained and is approximately 5.0 °C. Thus, the maximum output power is achieved in the porous device (about 25 pW), which is 5 times higher than that of the nonporous device. This provides a method to improve the conversion efficiency of thermoelectric film device by maintaining the temperature difference by using porous structure.
| Original language | English |
|---|---|
| Pages (from-to) | 400-405 |
| Number of pages | 6 |
| Journal | Current Applied Physics |
| Volume | 20 |
| Issue number | 3 |
| DOIs | |
| State | Published - Mar 2020 |
| Externally published | Yes |
Keywords
- Nanopore
- Temperature difference
- Thermal evaporation
- Thermoelectric film
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