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Study on the technology of large size sapphire single crystal growth by SAPMAC

  • Harbin Institute of Technology

Research output: Contribution to journalArticlepeer-review

Abstract

A φ220 × 200 mm sapphire crystal, with <1010> oriented had been grown by sapphire growth technique with micro-pulling and shoulder at cooled center (SAPMAC) method. In the research, the temperature gradient of the crystallization region was 0.5-1.0°C/mm and the growth velocity was 0.1-2 mm/h in vacuum environment. The result shows the transmission of the sapphire slice with 1 mm thickness is at least 85% in the range from 2500 to 4000 cm-1.

Original languageEnglish
Pages (from-to)794-796
Number of pages3
JournalHarbin Gongye Daxue Xuebao/Journal of Harbin Institute of Technology
Volume39
Issue number5
StatePublished - May 2007

Keywords

  • SAPMAC
  • Sapphire single crystal
  • Transmission

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