Abstract
A φ220 × 200 mm sapphire crystal, with <1010> oriented had been grown by sapphire growth technique with micro-pulling and shoulder at cooled center (SAPMAC) method. In the research, the temperature gradient of the crystallization region was 0.5-1.0°C/mm and the growth velocity was 0.1-2 mm/h in vacuum environment. The result shows the transmission of the sapphire slice with 1 mm thickness is at least 85% in the range from 2500 to 4000 cm-1.
| Original language | English |
|---|---|
| Pages (from-to) | 794-796 |
| Number of pages | 3 |
| Journal | Harbin Gongye Daxue Xuebao/Journal of Harbin Institute of Technology |
| Volume | 39 |
| Issue number | 5 |
| State | Published - May 2007 |
Keywords
- SAPMAC
- Sapphire single crystal
- Transmission
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