Study on the near-infrared absorption properties of ZnGeP2 single crystals

Shi Xing Xia; Chun Hui Yang; Chong Qiang Zhu; Tian Hui Ma; Meng Wang; Zuo Tao Lei; Bin Xu

doi:10.3724/SP.J.1077.2010.01029

Study on the near-infrared absorption properties of ZnGeP₂ single crystals

Shi Xing Xia
, Chun Hui Yang^*
, Chong Qiang Zhu
, Tian Hui Ma
, Meng Wang
, Zuo Tao Lei
, Bin Xu

^*Corresponding author for this work

School of Chemistry and Chemical Engineering, Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

Abstract

Zinc germanium phosphide crystals about φ-20mm × 90mm were grown by using Bridgman techniques. The three measured crystal sheets with thickness 4.0mm were obtained from the tail, middle and top of single crystal ingot. The infrared absorption properties were studied according to the experimental and theoretical data. The results show that the transmitted intensity gradually increased from top to bottom of ZGP crystals, which is caused by the inhomogeneous distribution of different kinds of intrinsic point defect. The absorption spectra of donor defects Ge_Zn⁺ and acceptor defect V_Zn^- in ZGP crystals are calculated theoretically. It is found that the influence of acceptor defect V_Zn^- on absorption spectra is stronger than that of donor defect Ge_Zn⁺.

Original language	English
Pages (from-to)	1029-1033
Number of pages	5
Journal	Wuji Cailiao Xuebao/Journal of Inorganic Materials
Volume	25
Issue number	10
DOIs	https://doi.org/10.3724/SP.J.1077.2010.01029
State	Published - Oct 2010
Externally published	Yes

Keywords

Acceptor defects
Defects density
Donor defects
Near infrared absorption
Zinc germanium phosphide

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10.3724/SP.J.1077.2010.01029

Cite this

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title = "Study on the near-infrared absorption properties of ZnGeP2 single crystals",

abstract = "Zinc germanium phosphide crystals about φ-20mm × 90mm were grown by using Bridgman techniques. The three measured crystal sheets with thickness 4.0mm were obtained from the tail, middle and top of single crystal ingot. The infrared absorption properties were studied according to the experimental and theoretical data. The results show that the transmitted intensity gradually increased from top to bottom of ZGP crystals, which is caused by the inhomogeneous distribution of different kinds of intrinsic point defect. The absorption spectra of donor defects GeZn+ and acceptor defect VZn- in ZGP crystals are calculated theoretically. It is found that the influence of acceptor defect VZn- on absorption spectra is stronger than that of donor defect GeZn+.",

keywords = "Acceptor defects, Defects density, Donor defects, Near infrared absorption, Zinc germanium phosphide",

author = "Xia, \{Shi Xing\} and Yang, \{Chun Hui\} and Zhu, \{Chong Qiang\} and Ma, \{Tian Hui\} and Meng Wang and Lei, \{Zuo Tao\} and Bin Xu",

year = "2010",

month = oct,

doi = "10.3724/SP.J.1077.2010.01029",

language = "英语",

volume = "25",

pages = "1029--1033",

journal = "Wuji Cailiao Xuebao/Journal of Inorganic Materials",

issn = "1000-324X",

publisher = "Science Press ",

number = "10",

}

TY - JOUR

T1 - Study on the near-infrared absorption properties of ZnGeP2 single crystals

AU - Xia, Shi Xing

AU - Yang, Chun Hui

AU - Zhu, Chong Qiang

AU - Ma, Tian Hui

AU - Wang, Meng

AU - Lei, Zuo Tao

AU - Xu, Bin

PY - 2010/10

Y1 - 2010/10

N2 - Zinc germanium phosphide crystals about φ-20mm × 90mm were grown by using Bridgman techniques. The three measured crystal sheets with thickness 4.0mm were obtained from the tail, middle and top of single crystal ingot. The infrared absorption properties were studied according to the experimental and theoretical data. The results show that the transmitted intensity gradually increased from top to bottom of ZGP crystals, which is caused by the inhomogeneous distribution of different kinds of intrinsic point defect. The absorption spectra of donor defects GeZn+ and acceptor defect VZn- in ZGP crystals are calculated theoretically. It is found that the influence of acceptor defect VZn- on absorption spectra is stronger than that of donor defect GeZn+.

AB - Zinc germanium phosphide crystals about φ-20mm × 90mm were grown by using Bridgman techniques. The three measured crystal sheets with thickness 4.0mm were obtained from the tail, middle and top of single crystal ingot. The infrared absorption properties were studied according to the experimental and theoretical data. The results show that the transmitted intensity gradually increased from top to bottom of ZGP crystals, which is caused by the inhomogeneous distribution of different kinds of intrinsic point defect. The absorption spectra of donor defects GeZn+ and acceptor defect VZn- in ZGP crystals are calculated theoretically. It is found that the influence of acceptor defect VZn- on absorption spectra is stronger than that of donor defect GeZn+.

KW - Acceptor defects

KW - Defects density

KW - Donor defects

KW - Near infrared absorption

KW - Zinc germanium phosphide

UR - https://www.scopus.com/pages/publications/78649276654

U2 - 10.3724/SP.J.1077.2010.01029

DO - 10.3724/SP.J.1077.2010.01029

M3 - 文章

AN - SCOPUS:78649276654

SN - 1000-324X

VL - 25

SP - 1029

EP - 1033

JO - Wuji Cailiao Xuebao/Journal of Inorganic Materials

JF - Wuji Cailiao Xuebao/Journal of Inorganic Materials

IS - 10

ER -

Study on the near-infrared absorption properties of ZnGeP₂ single crystals

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Keywords

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