Study on the evolution from α-GaOOH to α-Ga2O3and solar-blind detection behavior of an α-GaOOH/α-Ga2O3heterojunction

Yanan Zhang; Shujie Jiao; Junhua Zhang; Shuo Liu; Dongbo Wang; Shiyong Gao; Jinzhong Wang

doi:10.1039/d1ce01559a

Study on the evolution from α-GaOOH to α-Ga₂O₃and solar-blind detection behavior of an α-GaOOH/α-Ga₂O₃heterojunction

Yanan Zhang
, Shujie Jiao^*
, Junhua Zhang
, Shuo Liu
, Dongbo Wang
, Shiyong Gao^*
, Jinzhong Wang

^*Corresponding author for this work

Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

A GaOOH/Ga2O3 heterojunction was obtained by a one-step annealing treatment at a certain temperature. The solar blind photoresponse performance of the GaOOH/Ga2O3 heterojunction was characterized through photoelectrochemical detectors, providing a simple and effective method for pure solar-blind ultraviolet detection. The results showed that the maximum responsivity of the α-GaOOH/α-Ga2O3 heterojunction detector is 0.29 mA W-1 at 250 nm, which is 370% and 145% higher than that of the α-GaOOH and α-Ga2O3 detectors, respectively. The calculated solar-blind/visible detection ratio and light-to-dark current ratio of the detector are also significantly improved compared with the α-Ga2O3 and α-GaOOH detectors, reflecting better pure solar-blind ultraviolet detection performance. The photoresponse mechanism has been studied systemically.

Original language	English
Pages (from-to)	1789-1794
Number of pages	6
Journal	CrystEngComm
Volume	24
Issue number	9
DOIs	https://doi.org/10.1039/d1ce01559a
State	Published - 7 Mar 2022
Externally published	Yes

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@article{c268125126a94f399495ab0e6c834e90,

title = "Study on the evolution from α-GaOOH to α-Ga2O3and solar-blind detection behavior of an α-GaOOH/α-Ga2O3heterojunction",

abstract = "A GaOOH/Ga2O3 heterojunction was obtained by a one-step annealing treatment at a certain temperature. The solar blind photoresponse performance of the GaOOH/Ga2O3 heterojunction was characterized through photoelectrochemical detectors, providing a simple and effective method for pure solar-blind ultraviolet detection. The results showed that the maximum responsivity of the α-GaOOH/α-Ga2O3 heterojunction detector is 0.29 mA W-1 at 250 nm, which is 370\% and 145\% higher than that of the α-GaOOH and α-Ga2O3 detectors, respectively. The calculated solar-blind/visible detection ratio and light-to-dark current ratio of the detector are also significantly improved compared with the α-Ga2O3 and α-GaOOH detectors, reflecting better pure solar-blind ultraviolet detection performance. The photoresponse mechanism has been studied systemically.",

author = "Yanan Zhang and Shujie Jiao and Junhua Zhang and Shuo Liu and Dongbo Wang and Shiyong Gao and Jinzhong Wang",

note = "Publisher Copyright: {\textcopyright} 2022 The Royal Society of Chemistry.",

year = "2022",

month = mar,

day = "7",

doi = "10.1039/d1ce01559a",

language = "英语",

volume = "24",

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journal = "CrystEngComm",

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publisher = "Royal Society of Chemistry",

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}

TY - JOUR

T1 - Study on the evolution from α-GaOOH to α-Ga2O3and solar-blind detection behavior of an α-GaOOH/α-Ga2O3heterojunction

AU - Zhang, Yanan

AU - Jiao, Shujie

AU - Zhang, Junhua

AU - Liu, Shuo

AU - Wang, Dongbo

AU - Gao, Shiyong

AU - Wang, Jinzhong

PY - 2022/3/7

Y1 - 2022/3/7

N2 - A GaOOH/Ga2O3 heterojunction was obtained by a one-step annealing treatment at a certain temperature. The solar blind photoresponse performance of the GaOOH/Ga2O3 heterojunction was characterized through photoelectrochemical detectors, providing a simple and effective method for pure solar-blind ultraviolet detection. The results showed that the maximum responsivity of the α-GaOOH/α-Ga2O3 heterojunction detector is 0.29 mA W-1 at 250 nm, which is 370% and 145% higher than that of the α-GaOOH and α-Ga2O3 detectors, respectively. The calculated solar-blind/visible detection ratio and light-to-dark current ratio of the detector are also significantly improved compared with the α-Ga2O3 and α-GaOOH detectors, reflecting better pure solar-blind ultraviolet detection performance. The photoresponse mechanism has been studied systemically.

AB - A GaOOH/Ga2O3 heterojunction was obtained by a one-step annealing treatment at a certain temperature. The solar blind photoresponse performance of the GaOOH/Ga2O3 heterojunction was characterized through photoelectrochemical detectors, providing a simple and effective method for pure solar-blind ultraviolet detection. The results showed that the maximum responsivity of the α-GaOOH/α-Ga2O3 heterojunction detector is 0.29 mA W-1 at 250 nm, which is 370% and 145% higher than that of the α-GaOOH and α-Ga2O3 detectors, respectively. The calculated solar-blind/visible detection ratio and light-to-dark current ratio of the detector are also significantly improved compared with the α-Ga2O3 and α-GaOOH detectors, reflecting better pure solar-blind ultraviolet detection performance. The photoresponse mechanism has been studied systemically.

UR - https://www.scopus.com/pages/publications/85125776284

U2 - 10.1039/d1ce01559a

DO - 10.1039/d1ce01559a

M3 - 文章

AN - SCOPUS:85125776284

SN - 1466-8033

VL - 24

SP - 1789

EP - 1794

JO - CrystEngComm

JF - CrystEngComm

IS - 9

ER -

Study on the evolution from α-GaOOH to α-Ga₂O₃and solar-blind detection behavior of an α-GaOOH/α-Ga₂O₃heterojunction

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