Study on the annealed ZnO films grown by plasma-assisted MOCVD

Jin Zhong Wang; Xin Qiang Wang; Jian Gang Wang; Xiu Ying Jiang; Shu Ren Yang; Guo Tong Du; Ding San Gao; Xiang Liu; Hui Cao; Jun Ying Xu; R. P.H. Chang

Study on the annealed ZnO films grown by plasma-assisted MOCVD

Jin Zhong Wang^*
, Xin Qiang Wang
, Jian Gang Wang
, Xiu Ying Jiang
, Shu Ren Yang
, Guo Tong Du
, Ding San Gao
, Xiang Liu
, Hui Cao
, Jun Ying Xu
, R. P.H. Chang

^*Corresponding author for this work

Jilin University

Research output: Contribution to journal › Article › peer-review

Abstract

The ZnO thin films were grown on the (0001) surface of sapphire by plasma-assisted MOCVD. The resistivity, concentration of electron, mobility and optical lasing threshold of the films were investigated. The quality of the films is characterized by XRD and photo-luminescence spectrum before and after annealing. showing that the concentration of electron is 10^-5/cm³, the optical lasing threshold is 0.0058 μJ, the full width at half height of XRD is 0.29 °, and the full width at half height of photoluminescence is 0.32 nm. It indicates that the films have very high quality.

Original language	English
Pages (from-to)	502-503
Number of pages	2
Journal	Gongneng Cailiao/Journal of Functional Materials
Volume	32
Issue number	5
State	Published - Oct 2001
Externally published	Yes

Keywords

Optical threshold
Photoluminescence
Plasma-assisted MOCVD
X-ray diffraction

Cite this

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title = "Study on the annealed ZnO films grown by plasma-assisted MOCVD",

abstract = "The ZnO thin films were grown on the (0001) surface of sapphire by plasma-assisted MOCVD. The resistivity, concentration of electron, mobility and optical lasing threshold of the films were investigated. The quality of the films is characterized by XRD and photo-luminescence spectrum before and after annealing. showing that the concentration of electron is 10-5/cm3, the optical lasing threshold is 0.0058 μJ, the full width at half height of XRD is 0.29 °, and the full width at half height of photoluminescence is 0.32 nm. It indicates that the films have very high quality.",

keywords = "Optical threshold, Photoluminescence, Plasma-assisted MOCVD, X-ray diffraction",

author = "Wang, \{Jin Zhong\} and Wang, \{Xin Qiang\} and Wang, \{Jian Gang\} and Jiang, \{Xiu Ying\} and Yang, \{Shu Ren\} and Du, \{Guo Tong\} and Gao, \{Ding San\} and Xiang Liu and Hui Cao and Xu, \{Jun Ying\} and Chang, \{R. P.H.\}",

year = "2001",

month = oct,

language = "英语",

volume = "32",

pages = "502--503",

journal = "Gongneng Cailiao/Journal of Functional Materials",

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TY - JOUR

T1 - Study on the annealed ZnO films grown by plasma-assisted MOCVD

AU - Wang, Jin Zhong

AU - Wang, Xin Qiang

AU - Wang, Jian Gang

AU - Jiang, Xiu Ying

AU - Yang, Shu Ren

AU - Du, Guo Tong

AU - Gao, Ding San

AU - Liu, Xiang

AU - Cao, Hui

AU - Xu, Jun Ying

AU - Chang, R. P.H.

PY - 2001/10

Y1 - 2001/10

N2 - The ZnO thin films were grown on the (0001) surface of sapphire by plasma-assisted MOCVD. The resistivity, concentration of electron, mobility and optical lasing threshold of the films were investigated. The quality of the films is characterized by XRD and photo-luminescence spectrum before and after annealing. showing that the concentration of electron is 10-5/cm3, the optical lasing threshold is 0.0058 μJ, the full width at half height of XRD is 0.29 °, and the full width at half height of photoluminescence is 0.32 nm. It indicates that the films have very high quality.

AB - The ZnO thin films were grown on the (0001) surface of sapphire by plasma-assisted MOCVD. The resistivity, concentration of electron, mobility and optical lasing threshold of the films were investigated. The quality of the films is characterized by XRD and photo-luminescence spectrum before and after annealing. showing that the concentration of electron is 10-5/cm3, the optical lasing threshold is 0.0058 μJ, the full width at half height of XRD is 0.29 °, and the full width at half height of photoluminescence is 0.32 nm. It indicates that the films have very high quality.

KW - Optical threshold

KW - Photoluminescence

KW - Plasma-assisted MOCVD

KW - X-ray diffraction

UR - https://www.scopus.com/pages/publications/0035494789

M3 - 文章

AN - SCOPUS:0035494789

SN - 1001-9731

VL - 32

SP - 502

EP - 503

JO - Gongneng Cailiao/Journal of Functional Materials

JF - Gongneng Cailiao/Journal of Functional Materials

IS - 5

ER -

Study on the annealed ZnO films grown by plasma-assisted MOCVD

Abstract

Keywords

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