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Study on dielectric constant of SiO2 thin film in infrared range 400cm-1-4000cm-1

  • Liu Huasong
  • , Wang Lishuan
  • , Yang Xiao
  • , Jiang Chenghui
  • , Jiang Yugang
  • , Ji Yiqin
  • , Zhang Feng
  • , Chen Deying
  • , Cheng Xinbin
  • , Wang Zhanshan
  • HIWING Technology Academy of CASIC
  • Harbin Institute of Technology
  • Tongji University

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Compound Gaussian oscillator model is one of the most commonly used physics model in the study of dielectric coefficient of amorphous glassy material in abnormal dispersion region. A new procedure was demonstrated for that the characteristic peaks of SiO2 films were equal to chemical component by combining the factorial analysis technology of chemical meterage. Infrared absorption spectrum in the range of wavenumber 400~4000cm-1 was studied. Through matrix analysis of infrared spectrum of ion sputtering prepared SiO2 films of different thickness (800~100nm), the number of Gaussian oscillators was calculated to be 9, which provide definite physics meaning for the reverse data process of dielectric constant. A comparison of dielectric constant between SiO2 thin film and fused quartz in the range of wavenumber 3000~4000cm-1 was made. Results indicated that there is obvious hydration defects in SiO2 films, which would affect the dielectric constant in the entire infrared range.

Original languageEnglish
Title of host publicationOptical Interference Coatings, OIC 2016
PublisherOptica Publishing Group (formerly OSA)
ISBN (Print)9781943580132
StatePublished - 2016
EventOptical Interference Coatings, OIC 2016 - Tucson, United States
Duration: 19 Jun 201624 Jun 2016

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Conference

ConferenceOptical Interference Coatings, OIC 2016
Country/TerritoryUnited States
CityTucson
Period19/06/1624/06/16

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