Study on co-electrodeposited tri-compound AlxGa1-xAs films

Chunhui Yang; Shuichi Ye; Aizhen Han; Yuankai Gao

Study on co-electrodeposited tri-compound Al_xGa_1-xAs films

Chunhui Yang^*
, Shuichi Ye
, Aizhen Han
, Yuankai Gao

^*Corresponding author for this work

School of Chemistry and Chemical Engineering

Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

Abstract

The preparation of tri-compound Al_xGa_1-xAs films by using electrodepositing technology in simple salt solution with additives-citric acid was described. The Composition of the deposited films was measured by energy spectrum analyzer. The result shows that stoichiometric Al_0.3Ga_0.7As tri-compound semiconductor materials were obtained approximately.

Original language	English
Pages (from-to)	239-242
Number of pages	4
Journal	Taiyangneng Xuebao/Acta Energiae Solaris Sinica
Volume	21
Issue number	3
State	Published - Jul 2000

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Cite this

@article{0bd9419ef327435f81666cc237a4d436,

title = "Study on co-electrodeposited tri-compound AlxGa1-xAs films",

abstract = "The preparation of tri-compound AlxGa1-xAs films by using electrodepositing technology in simple salt solution with additives-citric acid was described. The Composition of the deposited films was measured by energy spectrum analyzer. The result shows that stoichiometric Al0.3Ga0.7As tri-compound semiconductor materials were obtained approximately.",

author = "Chunhui Yang and Shuichi Ye and Aizhen Han and Yuankai Gao",

year = "2000",

month = jul,

language = "英语",

volume = "21",

pages = "239--242",

journal = "Taiyangneng Xuebao/Acta Energiae Solaris Sinica",

issn = "0254-0096",

publisher = "Science Press ",

number = "3",

}

TY - JOUR

T1 - Study on co-electrodeposited tri-compound AlxGa1-xAs films

AU - Yang, Chunhui

AU - Ye, Shuichi

AU - Han, Aizhen

AU - Gao, Yuankai

PY - 2000/7

Y1 - 2000/7

N2 - The preparation of tri-compound AlxGa1-xAs films by using electrodepositing technology in simple salt solution with additives-citric acid was described. The Composition of the deposited films was measured by energy spectrum analyzer. The result shows that stoichiometric Al0.3Ga0.7As tri-compound semiconductor materials were obtained approximately.

AB - The preparation of tri-compound AlxGa1-xAs films by using electrodepositing technology in simple salt solution with additives-citric acid was described. The Composition of the deposited films was measured by energy spectrum analyzer. The result shows that stoichiometric Al0.3Ga0.7As tri-compound semiconductor materials were obtained approximately.

UR - https://www.scopus.com/pages/publications/0034216951

M3 - 文章

AN - SCOPUS:0034216951

SN - 0254-0096

VL - 21

SP - 239

EP - 242

JO - Taiyangneng Xuebao/Acta Energiae Solaris Sinica

JF - Taiyangneng Xuebao/Acta Energiae Solaris Sinica

IS - 3

ER -

Study on co-electrodeposited tri-compound Al_xGa_1-xAs films

Abstract

UN SDGs

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