Study of hot electrons in AlGaN/GaN HEMTs under RF Class B and Class J operation using electroluminescence

Tommaso Brazzini; Michael A. Casbon; Huarui Sun; Michael J. Uren; Jonathan Lees; Paul J. Tasker; Helmut Jung; Hervé Blanck; Martin Kuball

doi:10.1016/j.microrel.2015.09.023

Study of hot electrons in AlGaN/GaN HEMTs under RF Class B and Class J operation using electroluminescence

Tommaso Brazzini^*
, Michael A. Casbon
, Huarui Sun
, Michael J. Uren
, Jonathan Lees
, Paul J. Tasker
, Helmut Jung
, Hervé Blanck
, Martin Kuball

^*Corresponding author for this work

University of Bristol
Cardiff University
United Monolithic Semiconductors

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Electroluminescence microscopy and spectroscopy have been used to investigate hot electron concentration and electron temperature during RF operation. Two modes of operation were chosen, Class B and Class J, and compared with DC conditions. Hot electron concentration and temperature were on average lower for both RF modes than under comparative DC conditions. While these average values suggest that degradation due exclusively to hot electrons may be lower for RF than for DC conditions, the peak values in EL intensity and electric field along dynamic load lines have also to be taken into account and these are higher under Class J than Class B.

Original language	English
Pages (from-to)	2493-2498
Number of pages	6
Journal	Microelectronics Reliability
Volume	55
Issue number	12
DOIs	https://doi.org/10.1016/j.microrel.2015.09.023
State	Published - 1 Dec 2015
Externally published	Yes

Keywords

AlGaN/GaN
Class B
Class J
Electroluminescence
Electron temperature
Hot-electrons
Microwave field-effect transistor (FETs)
RF degradation

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10.1016/j.microrel.2015.09.023

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title = "Study of hot electrons in AlGaN/GaN HEMTs under RF Class B and Class J operation using electroluminescence",

abstract = "Electroluminescence microscopy and spectroscopy have been used to investigate hot electron concentration and electron temperature during RF operation. Two modes of operation were chosen, Class B and Class J, and compared with DC conditions. Hot electron concentration and temperature were on average lower for both RF modes than under comparative DC conditions. While these average values suggest that degradation due exclusively to hot electrons may be lower for RF than for DC conditions, the peak values in EL intensity and electric field along dynamic load lines have also to be taken into account and these are higher under Class J than Class B.",

keywords = "AlGaN/GaN, Class B, Class J, Electroluminescence, Electron temperature, Hot-electrons, Microwave field-effect transistor (FETs), RF degradation",

author = "Tommaso Brazzini and Casbon, \{Michael A.\} and Huarui Sun and Uren, \{Michael J.\} and Jonathan Lees and Tasker, \{Paul J.\} and Helmut Jung and Herv{\'e} Blanck and Martin Kuball",

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year = "2015",

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day = "1",

doi = "10.1016/j.microrel.2015.09.023",

language = "英语",

volume = "55",

pages = "2493--2498",

journal = "Microelectronics Reliability",

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}

TY - JOUR

T1 - Study of hot electrons in AlGaN/GaN HEMTs under RF Class B and Class J operation using electroluminescence

AU - Brazzini, Tommaso

AU - Casbon, Michael A.

AU - Sun, Huarui

AU - Uren, Michael J.

AU - Lees, Jonathan

AU - Tasker, Paul J.

AU - Jung, Helmut

AU - Blanck, Hervé

AU - Kuball, Martin

PY - 2015/12/1

Y1 - 2015/12/1

N2 - Electroluminescence microscopy and spectroscopy have been used to investigate hot electron concentration and electron temperature during RF operation. Two modes of operation were chosen, Class B and Class J, and compared with DC conditions. Hot electron concentration and temperature were on average lower for both RF modes than under comparative DC conditions. While these average values suggest that degradation due exclusively to hot electrons may be lower for RF than for DC conditions, the peak values in EL intensity and electric field along dynamic load lines have also to be taken into account and these are higher under Class J than Class B.

AB - Electroluminescence microscopy and spectroscopy have been used to investigate hot electron concentration and electron temperature during RF operation. Two modes of operation were chosen, Class B and Class J, and compared with DC conditions. Hot electron concentration and temperature were on average lower for both RF modes than under comparative DC conditions. While these average values suggest that degradation due exclusively to hot electrons may be lower for RF than for DC conditions, the peak values in EL intensity and electric field along dynamic load lines have also to be taken into account and these are higher under Class J than Class B.

KW - AlGaN/GaN

KW - Class B

KW - Class J

KW - Electroluminescence

KW - Electron temperature

KW - Hot-electrons

KW - Microwave field-effect transistor (FETs)

KW - RF degradation

UR - https://www.scopus.com/pages/publications/84949727450

U2 - 10.1016/j.microrel.2015.09.023

DO - 10.1016/j.microrel.2015.09.023

M3 - 文章

AN - SCOPUS:84949727450

SN - 0026-2714

VL - 55

SP - 2493

EP - 2498

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 12

ER -

Study of hot electrons in AlGaN/GaN HEMTs under RF Class B and Class J operation using electroluminescence

Abstract

Keywords

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