STUDY OF DRIVING SCHEMES AND PROTECTION CIRCUITS FOR D-MODE GaN DEVICES

Ying Liu; Haoran Ma; Jiantao Zhang; Xiangcheng Liu; Yao Wang; Ziteng Wang; Gang Xu; Chunbo Zhu; Ju Huo

doi:10.1049/icp.2025.4219

STUDY OF DRIVING SCHEMES AND PROTECTION CIRCUITS FOR D-MODE GaN DEVICES

Ying Liu
, Haoran Ma
, Jiantao Zhang^*
, Xiangcheng Liu
, Yao Wang
, Ziteng Wang
, Gang Xu
, Chunbo Zhu
, Ju Huo

^*Corresponding author for this work

School of Electrical Engineering and Automation

School of Electrical Engineering and Automation, Harbin Institute of Technology
Harbin Institute of Technology
Shanghai Institute of Satelite Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The emergence of third-generation wide-bandgap semiconductor devices, exemplified by GaN, underscores the pressing demand in modern power electronics for power converters that deliver high efficiency, high power density, and high reliability. Owing to their elevated critical electric field, these devices can undergo extremely rapid failure under electrical stress. Consequently, a comprehensive protection scheme, augmented by an appropriate driving strategy, is indispensable for achieving a reliability solution that yields maximum benefit with minimal effort. This paper presents a systematic simulation study on the selection of driving schemes, short-circuit protection strategies, and Miller-effect mitigation techniques for e-mode GaN devices employed in a half-bridge inverter, thereby investigating solutions to their reliability challenges.

Original language	English
Title of host publication	9th International Conference on Electromagnetic Field Problems and Applications, ICEF 2025
Publisher	Institution of Engineering and Technology
Pages	189-193
Number of pages	5
Volume	2025
Edition	37
ISBN (Electronic)	9781807050207, 9781807050344, 9781807050351, 9781807050375, 9781837242634, 9781837242900, 9781837242917, 9781837243143, 9781837243150, 9781837243167, 9781837243235, 9781837243341, 9781837243358, 9781837245277, 9781837246847, 9781837246854, 9781837247004, 9781837247011, 9781837247028, 9781837247035, 9781837247042, 9781837247059, 9781837247257, 9781837247264, 9781837247271, 9781837247295, 9781837247325, 9781837247332, 9781837249916
DOIs	https://doi.org/10.1049/icp.2025.4219
State	Published - 1 Dec 2025
Event	9th International Conference on Electromagnetic Field Problems and Applications, ICEF 2025 - Harbin, China Duration: 10 Oct 2025 → 12 Oct 2025

Conference

Conference	9th International Conference on Electromagnetic Field Problems and Applications, ICEF 2025
Country/Territory	China
City	Harbin
Period	10/10/25 → 12/10/25

Keywords

D-MODE GaN HEMT
DIRECT DRIVE
MILLER EFFECT SUPPRESSION
SHORT CURCUIT PROTECTION
SIMULATION STUDY

Access to Document

10.1049/icp.2025.4219

Cite this

Liu, Y., Ma, H., Zhang, J., Liu, X., Wang, Y., Wang, Z., Xu, G., Zhu, C., & Huo, J. (2025). STUDY OF DRIVING SCHEMES AND PROTECTION CIRCUITS FOR D-MODE GaN DEVICES. In 9th International Conference on Electromagnetic Field Problems and Applications, ICEF 2025 (37 ed., Vol. 2025, pp. 189-193). Institution of Engineering and Technology. https://doi.org/10.1049/icp.2025.4219

@inproceedings{2d8f709225664b58b4394d09b9deee17,

title = "STUDY OF DRIVING SCHEMES AND PROTECTION CIRCUITS FOR D-MODE GaN DEVICES",

abstract = "The emergence of third-generation wide-bandgap semiconductor devices, exemplified by GaN, underscores the pressing demand in modern power electronics for power converters that deliver high efficiency, high power density, and high reliability. Owing to their elevated critical electric field, these devices can undergo extremely rapid failure under electrical stress. Consequently, a comprehensive protection scheme, augmented by an appropriate driving strategy, is indispensable for achieving a reliability solution that yields maximum benefit with minimal effort. This paper presents a systematic simulation study on the selection of driving schemes, short-circuit protection strategies, and Miller-effect mitigation techniques for e-mode GaN devices employed in a half-bridge inverter, thereby investigating solutions to their reliability challenges.",

keywords = "D-MODE GaN HEMT, DIRECT DRIVE, MILLER EFFECT SUPPRESSION, SHORT CURCUIT PROTECTION, SIMULATION STUDY",

author = "Ying Liu and Haoran Ma and Jiantao Zhang and Xiangcheng Liu and Yao Wang and Ziteng Wang and Gang Xu and Chunbo Zhu and Ju Huo",

note = "Publisher Copyright: {\textcopyright} The Institution of Engineering \& Technology 2025.; 9th International Conference on Electromagnetic Field Problems and Applications, ICEF 2025 ; Conference date: 10-10-2025 Through 12-10-2025",

year = "2025",

month = dec,

day = "1",

doi = "10.1049/icp.2025.4219",

language = "英语",

volume = "2025",

pages = "189--193",

booktitle = "9th International Conference on Electromagnetic Field Problems and Applications, ICEF 2025",

publisher = "Institution of Engineering and Technology",

address = "英国",

edition = "37",

}

Liu, Y, Ma, H, Zhang, J, Liu, X, Wang, Y, Wang, Z, Xu, G, Zhu, C & Huo, J 2025, STUDY OF DRIVING SCHEMES AND PROTECTION CIRCUITS FOR D-MODE GaN DEVICES. in 9th International Conference on Electromagnetic Field Problems and Applications, ICEF 2025. 37 edn, vol. 2025, Institution of Engineering and Technology, pp. 189-193, 9th International Conference on Electromagnetic Field Problems and Applications, ICEF 2025, Harbin, China, 10/10/25. https://doi.org/10.1049/icp.2025.4219

STUDY OF DRIVING SCHEMES AND PROTECTION CIRCUITS FOR D-MODE GaN DEVICES. / Liu, Ying; Ma, Haoran; Zhang, Jiantao et al.
9th International Conference on Electromagnetic Field Problems and Applications, ICEF 2025. Vol. 2025 37. ed. Institution of Engineering and Technology, 2025. p. 189-193.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - STUDY OF DRIVING SCHEMES AND PROTECTION CIRCUITS FOR D-MODE GaN DEVICES

AU - Liu, Ying

AU - Ma, Haoran

AU - Zhang, Jiantao

AU - Liu, Xiangcheng

AU - Wang, Yao

AU - Wang, Ziteng

AU - Xu, Gang

AU - Zhu, Chunbo

AU - Huo, Ju

PY - 2025/12/1

Y1 - 2025/12/1

N2 - The emergence of third-generation wide-bandgap semiconductor devices, exemplified by GaN, underscores the pressing demand in modern power electronics for power converters that deliver high efficiency, high power density, and high reliability. Owing to their elevated critical electric field, these devices can undergo extremely rapid failure under electrical stress. Consequently, a comprehensive protection scheme, augmented by an appropriate driving strategy, is indispensable for achieving a reliability solution that yields maximum benefit with minimal effort. This paper presents a systematic simulation study on the selection of driving schemes, short-circuit protection strategies, and Miller-effect mitigation techniques for e-mode GaN devices employed in a half-bridge inverter, thereby investigating solutions to their reliability challenges.

AB - The emergence of third-generation wide-bandgap semiconductor devices, exemplified by GaN, underscores the pressing demand in modern power electronics for power converters that deliver high efficiency, high power density, and high reliability. Owing to their elevated critical electric field, these devices can undergo extremely rapid failure under electrical stress. Consequently, a comprehensive protection scheme, augmented by an appropriate driving strategy, is indispensable for achieving a reliability solution that yields maximum benefit with minimal effort. This paper presents a systematic simulation study on the selection of driving schemes, short-circuit protection strategies, and Miller-effect mitigation techniques for e-mode GaN devices employed in a half-bridge inverter, thereby investigating solutions to their reliability challenges.

KW - D-MODE GaN HEMT

KW - DIRECT DRIVE

KW - MILLER EFFECT SUPPRESSION

KW - SHORT CURCUIT PROTECTION

KW - SIMULATION STUDY

UR - https://www.scopus.com/pages/publications/105040579880

U2 - 10.1049/icp.2025.4219

DO - 10.1049/icp.2025.4219

M3 - 会议稿件

AN - SCOPUS:105040579880

VL - 2025

SP - 189

EP - 193

BT - 9th International Conference on Electromagnetic Field Problems and Applications, ICEF 2025

PB - Institution of Engineering and Technology

T2 - 9th International Conference on Electromagnetic Field Problems and Applications, ICEF 2025

Y2 - 10 October 2025 through 12 October 2025

ER -

STUDY OF DRIVING SCHEMES AND PROTECTION CIRCUITS FOR D-MODE GaN DEVICES

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