@inproceedings{44928fe4176a4c1883afc6f1459fcb3a,
title = "Study of Chip Integration Process and Cooling Enhancement Based on BN-Filled Through-Silicon Vias",
abstract = "This work reports a method to fill silicon via holes with ultra-high thermal conductivity Boron Nitride (BN) nanosheet materials (particle size leqslant 10 μm). The thermal conductivity of the filled silicon vias is 146.177 W/(mċ K), which is about 57.29\% higher than that of the unfilled silicon vias. Utilizing the ultra-high thermal conductivity of BN and the thermal expansion coefficient that matches with that of Si, the thermal conductivity of the silicon vias can be effectively improved, which provides a new idea and methodology in the field of thermal management of three-dimensional integrated circuits.",
keywords = "BN, Through-Silicon Vias, cooling enhancement, filling process",
author = "Jinchang Meng and Shixiao Zhao and Shuchang Fan and Ningqiang Shi and Ling Li",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 2024 IEEE Academic International Symposium on Optoelectronics and Microelectronics Technology, AISOMT 2024 ; Conference date: 21-11-2024 Through 22-11-2024",
year = "2024",
doi = "10.1109/AISOMT64170.2024.10992059",
language = "英语",
series = "2024 IEEE Academic International Symposium on Optoelectronics and Microelectronics Technology, AISOMT 2024",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "425--429",
booktitle = "2024 IEEE Academic International Symposium on Optoelectronics and Microelectronics Technology, AISOMT 2024",
address = "美国",
}