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Strongly bias-dependent tunnel magnetoresistance in manganite spin filter tunnel junctions

  • Bhagwati Prasad*
  • , Wenrui Zhang
  • , Jie Jian
  • , Haiyan Wang
  • , Mark G. Blamire
  • *Corresponding author for this work
  • University of Cambridge
  • Texas A&M University

Research output: Contribution to journalArticlepeer-review

Abstract

A highly unconventional bias-dependent tunnel magnetoresistance (TMR) response is observed in Sm0.75Sr0.25MnO3-based nanopillar spin filter tunnel junctions (SFTJs) with two different behaviors in two different thickness regimes of the barrier layer. Thinner barrier devices exhibit conventional SFTJ behaviors; however, for larger barrier thicknesses, the TMR-bias dependence is more complex and reverses sign at higher bias.

Original languageEnglish
Pages (from-to)3079-3084
Number of pages6
JournalAdvanced Materials
Volume27
Issue number19
DOIs
StatePublished - 20 May 2015
Externally publishedYes

Keywords

  • Coulomb blockade
  • Fowler-Nordheim tunneling
  • manganites
  • spin filter
  • tunnel magnetoresistance

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