Stress-induced shifting of the morphotropic phase boundary in sol-gel derived Pb(Zr0.5Ti0.5)O3 thin films

S. Q. Zhang; L. D. Wang; W. L. Li; C. Q. Liu; J. N. Wang; N. Li; A. Rajabtabar Darvishi; W. D. Fei

doi:10.1016/j.materresbull.2011.04.003

Stress-induced shifting of the morphotropic phase boundary in sol-gel derived Pb(Zr_0.5Ti_0.5)O₃ thin films

S. Q. Zhang
, L. D. Wang
, W. L. Li
, C. Q. Liu
, J. N. Wang
, N. Li
, A. Rajabtabar Darvishi
, W. D. Fei

Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The structure evolution of Pb(Zr_0.5Ti_0.5)O ₃ thin films with different thicknesses on the Pt(1 1 1)/Ti/SiO ₂/Si substrates has been investigated using X-ray diffraction and Raman scattering. Differing from Pb(Zr_0.5Ti_0.5)O ₃ bulk ceramic with a tetragonal phase, our results indicate that for PZT thin films with the same composition monoclinic phase with Cm space group coexisting with tetragonal phase can appear. It is suggested that tensile stress plays a role in shifting the morphotropic phase boundary to titanium-rich region in PZT thin films. The deteriorated ferroelectric properties of PZT thin films can be attributed mainly to the presence of thin non-ferroelectric layer and large tensile stress.

Original language	English
Pages (from-to)	1237-1242
Number of pages	6
Journal	Materials Research Bulletin
Volume	46
Issue number	8
DOIs	https://doi.org/10.1016/j.materresbull.2011.04.003
State	Published - Aug 2011
Externally published	Yes

Keywords

A. Thin films
B. Sol-gel chemistry
C. X-ray diffraction
D. Crystal structure
D. Ferroelectricity

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10.1016/j.materresbull.2011.04.003

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@article{114023a5151841278b65077c7f5a99af,

title = "Stress-induced shifting of the morphotropic phase boundary in sol-gel derived Pb(Zr0.5Ti0.5)O3 thin films",

abstract = "The structure evolution of Pb(Zr0.5Ti0.5)O 3 thin films with different thicknesses on the Pt(1 1 1)/Ti/SiO 2/Si substrates has been investigated using X-ray diffraction and Raman scattering. Differing from Pb(Zr0.5Ti0.5)O 3 bulk ceramic with a tetragonal phase, our results indicate that for PZT thin films with the same composition monoclinic phase with Cm space group coexisting with tetragonal phase can appear. It is suggested that tensile stress plays a role in shifting the morphotropic phase boundary to titanium-rich region in PZT thin films. The deteriorated ferroelectric properties of PZT thin films can be attributed mainly to the presence of thin non-ferroelectric layer and large tensile stress.",

keywords = "A. Thin films, B. Sol-gel chemistry, C. X-ray diffraction, D. Crystal structure, D. Ferroelectricity",

author = "Zhang, \{S. Q.\} and Wang, \{L. D.\} and Li, \{W. L.\} and Liu, \{C. Q.\} and Wang, \{J. N.\} and N. Li and Darvishi, \{A. Rajabtabar\} and Fei, \{W. D.\}",

year = "2011",

month = aug,

doi = "10.1016/j.materresbull.2011.04.003",

language = "英语",

volume = "46",

pages = "1237--1242",

journal = "Materials Research Bulletin",

issn = "0025-5408",

publisher = "Elsevier Ltd",

number = "8",

}

TY - JOUR

T1 - Stress-induced shifting of the morphotropic phase boundary in sol-gel derived Pb(Zr0.5Ti0.5)O3 thin films

AU - Zhang, S. Q.

AU - Wang, L. D.

AU - Li, W. L.

AU - Liu, C. Q.

AU - Wang, J. N.

AU - Li, N.

AU - Darvishi, A. Rajabtabar

AU - Fei, W. D.

PY - 2011/8

Y1 - 2011/8

N2 - The structure evolution of Pb(Zr0.5Ti0.5)O 3 thin films with different thicknesses on the Pt(1 1 1)/Ti/SiO 2/Si substrates has been investigated using X-ray diffraction and Raman scattering. Differing from Pb(Zr0.5Ti0.5)O 3 bulk ceramic with a tetragonal phase, our results indicate that for PZT thin films with the same composition monoclinic phase with Cm space group coexisting with tetragonal phase can appear. It is suggested that tensile stress plays a role in shifting the morphotropic phase boundary to titanium-rich region in PZT thin films. The deteriorated ferroelectric properties of PZT thin films can be attributed mainly to the presence of thin non-ferroelectric layer and large tensile stress.

AB - The structure evolution of Pb(Zr0.5Ti0.5)O 3 thin films with different thicknesses on the Pt(1 1 1)/Ti/SiO 2/Si substrates has been investigated using X-ray diffraction and Raman scattering. Differing from Pb(Zr0.5Ti0.5)O 3 bulk ceramic with a tetragonal phase, our results indicate that for PZT thin films with the same composition monoclinic phase with Cm space group coexisting with tetragonal phase can appear. It is suggested that tensile stress plays a role in shifting the morphotropic phase boundary to titanium-rich region in PZT thin films. The deteriorated ferroelectric properties of PZT thin films can be attributed mainly to the presence of thin non-ferroelectric layer and large tensile stress.

KW - A. Thin films

KW - B. Sol-gel chemistry

KW - C. X-ray diffraction

KW - D. Crystal structure

KW - D. Ferroelectricity

UR - https://www.scopus.com/pages/publications/79958153861

U2 - 10.1016/j.materresbull.2011.04.003

DO - 10.1016/j.materresbull.2011.04.003

M3 - 文章

AN - SCOPUS:79958153861

SN - 0025-5408

VL - 46

SP - 1237

EP - 1242

JO - Materials Research Bulletin

JF - Materials Research Bulletin

IS - 8

ER -

Stress-induced shifting of the morphotropic phase boundary in sol-gel derived Pb(Zr_0.5Ti_0.5)O₃ thin films

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Keywords

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