Stacking faults formation mechanism of in situ synthesized TiB whiskers

Haibo Feng; Yu Zhou; Dechang Jia; Qingchang Meng

doi:10.1016/j.scriptamat.2006.07.006

Stacking faults formation mechanism of in situ synthesized TiB whiskers

Haibo Feng^*
, Yu Zhou
, Dechang Jia
, Qingchang Meng

^*Corresponding author for this work

Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

92 Scopus citations

Abstract

In situ TiB whiskers have a hexagonal shape in the transverse section and grow along the [010]_TiB direction. The crystallographic planes of the TiB whiskers in the transverse section are always (100), (101) and (101̄). The stacking faults in TiB are typically with a stacking fault plane of (100)_TiB. The locations of boron atoms and the lattice mismatch energy between TiB and Ti matrix play key roles in the formation of stacking faults.

Original language	English
Pages (from-to)	667-670
Number of pages	4
Journal	Scripta Materialia
Volume	55
Issue number	8
DOIs	https://doi.org/10.1016/j.scriptamat.2006.07.006
State	Published - Oct 2006
Externally published	Yes

Keywords

In situ
Stacking faults
TiB
Whisker

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10.1016/j.scriptamat.2006.07.006

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title = "Stacking faults formation mechanism of in situ synthesized TiB whiskers",

abstract = "In situ TiB whiskers have a hexagonal shape in the transverse section and grow along the [010]TiB direction. The crystallographic planes of the TiB whiskers in the transverse section are always (100), (101) and (10{\=1}). The stacking faults in TiB are typically with a stacking fault plane of (100)TiB. The locations of boron atoms and the lattice mismatch energy between TiB and Ti matrix play key roles in the formation of stacking faults.",

keywords = "In situ, Stacking faults, TiB, Whisker",

author = "Haibo Feng and Yu Zhou and Dechang Jia and Qingchang Meng",

year = "2006",

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T1 - Stacking faults formation mechanism of in situ synthesized TiB whiskers

AU - Feng, Haibo

AU - Zhou, Yu

AU - Jia, Dechang

AU - Meng, Qingchang

PY - 2006/10

Y1 - 2006/10

N2 - In situ TiB whiskers have a hexagonal shape in the transverse section and grow along the [010]TiB direction. The crystallographic planes of the TiB whiskers in the transverse section are always (100), (101) and (101̄). The stacking faults in TiB are typically with a stacking fault plane of (100)TiB. The locations of boron atoms and the lattice mismatch energy between TiB and Ti matrix play key roles in the formation of stacking faults.

AB - In situ TiB whiskers have a hexagonal shape in the transverse section and grow along the [010]TiB direction. The crystallographic planes of the TiB whiskers in the transverse section are always (100), (101) and (101̄). The stacking faults in TiB are typically with a stacking fault plane of (100)TiB. The locations of boron atoms and the lattice mismatch energy between TiB and Ti matrix play key roles in the formation of stacking faults.

KW - In situ

KW - Stacking faults

KW - TiB

KW - Whisker

UR - https://www.scopus.com/pages/publications/33847194250

U2 - 10.1016/j.scriptamat.2006.07.006

DO - 10.1016/j.scriptamat.2006.07.006

M3 - 文章

AN - SCOPUS:33847194250

SN - 1359-6462

VL - 55

SP - 667

EP - 670

JO - Scripta Materialia

JF - Scripta Materialia

IS - 8

ER -

Stacking faults formation mechanism of in situ synthesized TiB whiskers

Abstract

Keywords

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