Stabilizing the Optimal Carrier Concentration in Al/Sb-Codoped GeTe for High Thermoelectric Performance

Xinyu Wang; Wenhua Xue; Zongwei Zhang; Xiaofang Li; Li Yin; Chen Chen; Bo Yu; Jiehe Sui; Feng Cao; Xingjun Liu; Jun Mao; Yumei Wang; Xi Lin; Qian Zhang

doi:10.1021/acsami.1c12282

Stabilizing the Optimal Carrier Concentration in Al/Sb-Codoped GeTe for High Thermoelectric Performance

Xinyu Wang
, Wenhua Xue
, Zongwei Zhang
, Xiaofang Li
, Li Yin
, Chen Chen
, Bo Yu
, Jiehe Sui
, Feng Cao
, Xingjun Liu
, Jun Mao
, Yumei Wang^*
, Xi Lin^*
, Qian Zhang^*

^*Corresponding author for this work

Harbin Institute of Technology
CAS - Institute of Physics
Ningbo Fengcheng Advanced Energy Materials Research Institute
Harbin Institute of Technology
Harbin Institute of Technology Shenzhen

Research output: Contribution to journal › Article › peer-review

35 Scopus citations

Abstract

GeTe is a promising thermoelectric material and has attracted growing research interest recently. In this study, the effect of Al doping and Al&Sb codoping on the thermoelectric properties of GeTe was investigated. Due to the presence of a high concentration of intrinsic Ge vacancies, pristine GeTe exhibited a very high hole concentration and unpromising thermoelectric performance. By Sb doping in GeTe, the hole concentration can be effectively reduced, thus improving the thermoelectric performance. Aluminum, as a p-type dopant in GeTe, will increase the hole concentration and lattice thermal conductivity; thus, it has long been considered as an unfavorable dopant for the optimization of GeTe-based materials. However, when Al and Sb were codoped into GeTe, the hole concentration was effectively suppressed, and the lattice thermal conductivity can be reduced. Eventually, a maximumzTof ∼2.0 at 773 K was achieved in Al&Sb-codoped Al_0.01Sb_0.1Ge_0.89Te.

Original language	English
Pages (from-to)	45717-45725
Number of pages	9
Journal	ACS Applied Materials and Interfaces
Volume	13
Issue number	38
DOIs	https://doi.org/10.1021/acsami.1c12282
State	Published - 29 Sep 2021

Keywords

Al&Sb codoping
hole concentration
lattice thermal conductivity
thermoelectric
zT

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10.1021/acsami.1c12282

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title = "Stabilizing the Optimal Carrier Concentration in Al/Sb-Codoped GeTe for High Thermoelectric Performance",

abstract = "GeTe is a promising thermoelectric material and has attracted growing research interest recently. In this study, the effect of Al doping and Al\&Sb codoping on the thermoelectric properties of GeTe was investigated. Due to the presence of a high concentration of intrinsic Ge vacancies, pristine GeTe exhibited a very high hole concentration and unpromising thermoelectric performance. By Sb doping in GeTe, the hole concentration can be effectively reduced, thus improving the thermoelectric performance. Aluminum, as a p-type dopant in GeTe, will increase the hole concentration and lattice thermal conductivity; thus, it has long been considered as an unfavorable dopant for the optimization of GeTe-based materials. However, when Al and Sb were codoped into GeTe, the hole concentration was effectively suppressed, and the lattice thermal conductivity can be reduced. Eventually, a maximumzTof ∼2.0 at 773 K was achieved in Al\&Sb-codoped Al0.01Sb0.1Ge0.89Te.",

keywords = "Al\&Sb codoping, hole concentration, lattice thermal conductivity, thermoelectric, zT",

author = "Xinyu Wang and Wenhua Xue and Zongwei Zhang and Xiaofang Li and Li Yin and Chen Chen and Bo Yu and Jiehe Sui and Feng Cao and Xingjun Liu and Jun Mao and Yumei Wang and Xi Lin and Qian Zhang",

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doi = "10.1021/acsami.1c12282",

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T1 - Stabilizing the Optimal Carrier Concentration in Al/Sb-Codoped GeTe for High Thermoelectric Performance

AU - Wang, Xinyu

AU - Xue, Wenhua

AU - Zhang, Zongwei

AU - Li, Xiaofang

AU - Yin, Li

AU - Chen, Chen

AU - Yu, Bo

AU - Sui, Jiehe

AU - Cao, Feng

AU - Liu, Xingjun

AU - Mao, Jun

AU - Wang, Yumei

AU - Lin, Xi

AU - Zhang, Qian

PY - 2021/9/29

Y1 - 2021/9/29

N2 - GeTe is a promising thermoelectric material and has attracted growing research interest recently. In this study, the effect of Al doping and Al&Sb codoping on the thermoelectric properties of GeTe was investigated. Due to the presence of a high concentration of intrinsic Ge vacancies, pristine GeTe exhibited a very high hole concentration and unpromising thermoelectric performance. By Sb doping in GeTe, the hole concentration can be effectively reduced, thus improving the thermoelectric performance. Aluminum, as a p-type dopant in GeTe, will increase the hole concentration and lattice thermal conductivity; thus, it has long been considered as an unfavorable dopant for the optimization of GeTe-based materials. However, when Al and Sb were codoped into GeTe, the hole concentration was effectively suppressed, and the lattice thermal conductivity can be reduced. Eventually, a maximumzTof ∼2.0 at 773 K was achieved in Al&Sb-codoped Al0.01Sb0.1Ge0.89Te.

AB - GeTe is a promising thermoelectric material and has attracted growing research interest recently. In this study, the effect of Al doping and Al&Sb codoping on the thermoelectric properties of GeTe was investigated. Due to the presence of a high concentration of intrinsic Ge vacancies, pristine GeTe exhibited a very high hole concentration and unpromising thermoelectric performance. By Sb doping in GeTe, the hole concentration can be effectively reduced, thus improving the thermoelectric performance. Aluminum, as a p-type dopant in GeTe, will increase the hole concentration and lattice thermal conductivity; thus, it has long been considered as an unfavorable dopant for the optimization of GeTe-based materials. However, when Al and Sb were codoped into GeTe, the hole concentration was effectively suppressed, and the lattice thermal conductivity can be reduced. Eventually, a maximumzTof ∼2.0 at 773 K was achieved in Al&Sb-codoped Al0.01Sb0.1Ge0.89Te.

KW - Al&Sb codoping

KW - hole concentration

KW - lattice thermal conductivity

KW - thermoelectric

KW - zT

UR - https://www.scopus.com/pages/publications/85116675950

U2 - 10.1021/acsami.1c12282

DO - 10.1021/acsami.1c12282

M3 - 文章

C2 - 34541842

AN - SCOPUS:85116675950

SN - 1944-8244

VL - 13

SP - 45717

EP - 45725

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

IS - 38

ER -

Stabilizing the Optimal Carrier Concentration in Al/Sb-Codoped GeTe for High Thermoelectric Performance

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Keywords

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