Abstract
A high optical quality Ho3+-doped lutetium orthosilicate laser crystal Lu2SiO5 has been grown by the Czochraski method and the accurate concentration of Ho3+ ions in the crystal was measured. The polarized absorption spectra, polarized fluorescence spectra and fluorescence decay curve of Ho3+ ions in the Lu2SiO 5 crystal were measured at room temperature. Based on the Judd-Ofelt model, three effective intensity parameters were determined as: Ω2,eff = 4.57 × 10 20cm2, Ω4,eff = 3.11 × 10 20cm2, Ω6,eff = 1.42 × 1020 cm2. The fluorescence lifetime of the 5I7 manifold for Ho 3+ ions was measured to be 3.3 ms and the quantum efficiency was estimated. The polarized emission cross-sections for the 5I 7 → 5I8 transition were determined by Fuchtbauer-Ladenburg formula. The good spectroscopic properties imply that Ho: Lu2SiO5 crystal is a potential laser gain medium for 2 μm lasers.
| Original language | English |
|---|---|
| Pages (from-to) | 873-877 |
| Number of pages | 5 |
| Journal | Optical Materials |
| Volume | 32 |
| Issue number | 9 |
| DOIs | |
| State | Published - Jul 2010 |
Keywords
- A1. Spectral properties
- A2. Czochraski method
- B2. Laser materials
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