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Spectroscopic properties of Ho3+ ions in biaxial Lu 2SiO5 crystal

  • Qin Dong
  • , Guangjun Zhao*
  • , Jianyu Chen
  • , Yuchong Ding
  • , Baoquan Yao
  • , Zhengping Yu
  • *Corresponding author for this work
  • CAS - Shanghai Institute of Optics and Fine Mechanics
  • University of Chinese Academy of Sciences
  • Harbin Institute of Technology

Research output: Contribution to journalArticlepeer-review

Abstract

A high optical quality Ho3+-doped lutetium orthosilicate laser crystal Lu2SiO5 has been grown by the Czochraski method and the accurate concentration of Ho3+ ions in the crystal was measured. The polarized absorption spectra, polarized fluorescence spectra and fluorescence decay curve of Ho3+ ions in the Lu2SiO 5 crystal were measured at room temperature. Based on the Judd-Ofelt model, three effective intensity parameters were determined as: Ω2,eff = 4.57 × 10 20cm2, Ω4,eff = 3.11 × 10 20cm2, Ω6,eff = 1.42 × 1020 cm2. The fluorescence lifetime of the 5I7 manifold for Ho 3+ ions was measured to be 3.3 ms and the quantum efficiency was estimated. The polarized emission cross-sections for the 5I 75I8 transition were determined by Fuchtbauer-Ladenburg formula. The good spectroscopic properties imply that Ho: Lu2SiO5 crystal is a potential laser gain medium for 2 μm lasers.

Original languageEnglish
Pages (from-to)873-877
Number of pages5
JournalOptical Materials
Volume32
Issue number9
DOIs
StatePublished - Jul 2010

Keywords

  • A1. Spectral properties
  • A2. Czochraski method
  • B2. Laser materials

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