Solution-processable carbon nanotubes for semiconducting thin-film transistor devices

Chun Wei Lee; Xuanding Han; Fuming Chen; Jun Wei; Yuan Chen; Mary B. Chan-Park; Lain Jong Li

doi:10.1002/adma.200902461

Solution-processable carbon nanotubes for semiconducting thin-film transistor devices

Chun Wei Lee
, Xuanding Han
, Fuming Chen
, Jun Wei
, Yuan Chen
, Mary B. Chan-Park
, Lain Jong Li

Nanyang Technological University
Agency for Science, Technology and Research, Singapore

Research output: Contribution to journal › Article › peer-review

49 Scopus citations

Abstract

(Figure Presented) CoMoCat single-walled carbon nanotubes (SWNTs) treated with diazonium salts can be used to fabricate solution-processable field-effect transistors (FETs) with a full semiconductor device yield. By increasing the network thickness, the effective mobility of the devices can be raised to ∼10 cm² V^-1s^-1 while keeping the on-off ratio higher than 5000. The removal of impurities is essential to achieve high-on-off-ratio devices. This approach is promising for preparation of SWNT inks for printing high-performance devices in flexible electronics.

Original language	English
Pages (from-to)	1278-1282
Number of pages	5
Journal	Advanced Materials
Volume	22
Issue number	11
DOIs	https://doi.org/10.1002/adma.200902461
State	Published - 19 Mar 2010
Externally published	Yes

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title = "Solution-processable carbon nanotubes for semiconducting thin-film transistor devices",

abstract = "(Figure Presented) CoMoCat single-walled carbon nanotubes (SWNTs) treated with diazonium salts can be used to fabricate solution-processable field-effect transistors (FETs) with a full semiconductor device yield. By increasing the network thickness, the effective mobility of the devices can be raised to ∼10 cm2 V-1s-1 while keeping the on-off ratio higher than 5000. The removal of impurities is essential to achieve high-on-off-ratio devices. This approach is promising for preparation of SWNT inks for printing high-performance devices in flexible electronics.",

author = "Lee, \{Chun Wei\} and Xuanding Han and Fuming Chen and Jun Wei and Yuan Chen and Chan-Park, \{Mary B.\} and Li, \{Lain Jong\}",

year = "2010",

month = mar,

day = "19",

doi = "10.1002/adma.200902461",

language = "英语",

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journal = "Advanced Materials",

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T1 - Solution-processable carbon nanotubes for semiconducting thin-film transistor devices

AU - Lee, Chun Wei

AU - Han, Xuanding

AU - Chen, Fuming

AU - Wei, Jun

AU - Chen, Yuan

AU - Chan-Park, Mary B.

AU - Li, Lain Jong

PY - 2010/3/19

Y1 - 2010/3/19

N2 - (Figure Presented) CoMoCat single-walled carbon nanotubes (SWNTs) treated with diazonium salts can be used to fabricate solution-processable field-effect transistors (FETs) with a full semiconductor device yield. By increasing the network thickness, the effective mobility of the devices can be raised to ∼10 cm2 V-1s-1 while keeping the on-off ratio higher than 5000. The removal of impurities is essential to achieve high-on-off-ratio devices. This approach is promising for preparation of SWNT inks for printing high-performance devices in flexible electronics.

AB - (Figure Presented) CoMoCat single-walled carbon nanotubes (SWNTs) treated with diazonium salts can be used to fabricate solution-processable field-effect transistors (FETs) with a full semiconductor device yield. By increasing the network thickness, the effective mobility of the devices can be raised to ∼10 cm2 V-1s-1 while keeping the on-off ratio higher than 5000. The removal of impurities is essential to achieve high-on-off-ratio devices. This approach is promising for preparation of SWNT inks for printing high-performance devices in flexible electronics.

UR - https://www.scopus.com/pages/publications/77950274613

U2 - 10.1002/adma.200902461

DO - 10.1002/adma.200902461

M3 - 文章

C2 - 20437519

AN - SCOPUS:77950274613

SN - 0935-9648

VL - 22

SP - 1278

EP - 1282

JO - Advanced Materials

JF - Advanced Materials

IS - 11

ER -

Solution-processable carbon nanotubes for semiconducting thin-film transistor devices

Abstract

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