Single-Event Burnout Hardening Method and Evaluation in SiC Power MOSFET Devices

Jian Xiong Bi; Ying Wang; Xue Wu; Xing Ji Li; Jian Qun Yang; Meng Tian Bao; Fei Cao

doi:10.1109/TED.2020.3015718

Single-Event Burnout Hardening Method and Evaluation in SiC Power MOSFET Devices

Jian Xiong Bi
, Ying Wang^*
, Xue Wu
, Xing Ji Li
, Jian Qun Yang
, Meng Tian Bao
, Fei Cao^*

^*Corresponding author for this work

School of Materials Science and Engineering

Hangzhou Dianzi University
National Key Laboratory of Analog Integrated Circuits

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

In this article, a method of single-event burnout (SEB) hardening at high linear energy transfer (LET) value range is proposed and investigated by the 2-D numerical simulations. The improved MOSFET using this method and the conventional MOSFET are analyzed and compared to evaluate the effectiveness of this method. Simulation results show that, compared with the conventional MOSFET, the improved MOSFET using this method can effectively and quickly reduce the internal high electric field, thereby reducing the temperature. Under the condition of a LET value of 0.5 pC/ \mu \text{m} and a drain voltage of 1200 V, the maximum drain current is 0.168 A, and the maximum global device temperature is 1724 K, which is much lower than the melting down temperature of silicon carbide (SiC) (3100 K). The hardening method in this article can be applied to different breakdown voltages by adjusting structure parameters.

Original language	English
Article number	9174662
Pages (from-to)	4340-4345
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	67
Issue number	10
DOIs	https://doi.org/10.1109/TED.2020.3015718
State	Published - Oct 2020

Keywords

2-D numerical simulation
linear energy transfer (LET)
silicon carbide (SiC) power MOSFET
single-event burnout (SEB)

Access to Document

10.1109/TED.2020.3015718

Cite this

@article{f47145207be8455e89653a742aeb95a0,

title = "Single-Event Burnout Hardening Method and Evaluation in SiC Power MOSFET Devices",

abstract = "In this article, a method of single-event burnout (SEB) hardening at high linear energy transfer (LET) value range is proposed and investigated by the 2-D numerical simulations. The improved MOSFET using this method and the conventional MOSFET are analyzed and compared to evaluate the effectiveness of this method. Simulation results show that, compared with the conventional MOSFET, the improved MOSFET using this method can effectively and quickly reduce the internal high electric field, thereby reducing the temperature. Under the condition of a LET value of 0.5 pC/ \textbackslash{}mu \textbackslash{}text\{m\} and a drain voltage of 1200 V, the maximum drain current is 0.168 A, and the maximum global device temperature is 1724 K, which is much lower than the melting down temperature of silicon carbide (SiC) (3100 K). The hardening method in this article can be applied to different breakdown voltages by adjusting structure parameters.",

keywords = "2-D numerical simulation, linear energy transfer (LET), silicon carbide (SiC) power MOSFET, single-event burnout (SEB)",

author = "Bi, \{Jian Xiong\} and Ying Wang and Xue Wu and Li, \{Xing Ji\} and Yang, \{Jian Qun\} and Bao, \{Meng Tian\} and Fei Cao",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2020",

month = oct,

doi = "10.1109/TED.2020.3015718",

language = "英语",

volume = "67",

pages = "4340--4345",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

TY - JOUR

T1 - Single-Event Burnout Hardening Method and Evaluation in SiC Power MOSFET Devices

AU - Bi, Jian Xiong

AU - Wang, Ying

AU - Wu, Xue

AU - Li, Xing Ji

AU - Yang, Jian Qun

AU - Bao, Meng Tian

AU - Cao, Fei

PY - 2020/10

Y1 - 2020/10

N2 - In this article, a method of single-event burnout (SEB) hardening at high linear energy transfer (LET) value range is proposed and investigated by the 2-D numerical simulations. The improved MOSFET using this method and the conventional MOSFET are analyzed and compared to evaluate the effectiveness of this method. Simulation results show that, compared with the conventional MOSFET, the improved MOSFET using this method can effectively and quickly reduce the internal high electric field, thereby reducing the temperature. Under the condition of a LET value of 0.5 pC/ \mu \text{m} and a drain voltage of 1200 V, the maximum drain current is 0.168 A, and the maximum global device temperature is 1724 K, which is much lower than the melting down temperature of silicon carbide (SiC) (3100 K). The hardening method in this article can be applied to different breakdown voltages by adjusting structure parameters.

AB - In this article, a method of single-event burnout (SEB) hardening at high linear energy transfer (LET) value range is proposed and investigated by the 2-D numerical simulations. The improved MOSFET using this method and the conventional MOSFET are analyzed and compared to evaluate the effectiveness of this method. Simulation results show that, compared with the conventional MOSFET, the improved MOSFET using this method can effectively and quickly reduce the internal high electric field, thereby reducing the temperature. Under the condition of a LET value of 0.5 pC/ \mu \text{m} and a drain voltage of 1200 V, the maximum drain current is 0.168 A, and the maximum global device temperature is 1724 K, which is much lower than the melting down temperature of silicon carbide (SiC) (3100 K). The hardening method in this article can be applied to different breakdown voltages by adjusting structure parameters.

KW - 2-D numerical simulation

KW - linear energy transfer (LET)

KW - silicon carbide (SiC) power MOSFET

KW - single-event burnout (SEB)

UR - https://www.scopus.com/pages/publications/85092127471

U2 - 10.1109/TED.2020.3015718

DO - 10.1109/TED.2020.3015718

M3 - 文章

AN - SCOPUS:85092127471

SN - 0018-9383

VL - 67

SP - 4340

EP - 4345

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 10

M1 - 9174662

ER -

Single-Event Burnout Hardening Method and Evaluation in SiC Power MOSFET Devices

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this