Simultaneous Boost of Power Factor and Figure-of-Merit in In–Cu Codoped SnTe

Fengkai Guo; Bo Cui; Huiyuan Geng; Yang Zhang; Haijun Wu; Qian Zhang; Bo Yu; Stephen J. Pennycook; Wei Cai; Jiehe Sui

doi:10.1002/smll.201902493

Simultaneous Boost of Power Factor and Figure-of-Merit in In–Cu Codoped SnTe

Fengkai Guo
, Bo Cui
, Huiyuan Geng
, Yang Zhang
, Haijun Wu^*
, Qian Zhang
, Bo Yu
, Stephen J. Pennycook
, Wei Cai
, Jiehe Sui

^*Corresponding author for this work

School of Materials Science and Engineering

Harbin Institute of Technology
National University of Singapore
Harbin Institute of Technology (Shenzhen)
Ningbo Fengcheng Advanced Energy Materials Research Institute

Research output: Contribution to journal › Article › peer-review

51 Scopus citations

Abstract

Significantly enhanced thermoelectric performance is achieved for eco-friendly SnTe by a coorperative effect between a dopant resonant energy level and interstitial defects. By manipulating the band structure through indium doping, the Seebeck coefficient is remarkably improved, leading to an enhanced power factor, with a high level of ≈29 µW cm⁻¹ K⁻² at 873 K. Lattice thermal conductivity is sharply reduced, approaching the amorphous limit, through the strong phonon scattering induced by multiple scales of Cu₂Te nanoprecipitates, as well as Cu interstitials, leading to a high ZT value of ≈1.55 at 873 K.

Original language	English
Article number	1902493
Journal	Small
Volume	15
Issue number	36
DOIs	https://doi.org/10.1002/smll.201902493
State	Published - 1 Sep 2019

Keywords

SnTe
interstitials
resonant levels

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10.1002/smll.201902493

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title = "Simultaneous Boost of Power Factor and Figure-of-Merit in In–Cu Codoped SnTe",

abstract = "Significantly enhanced thermoelectric performance is achieved for eco-friendly SnTe by a coorperative effect between a dopant resonant energy level and interstitial defects. By manipulating the band structure through indium doping, the Seebeck coefficient is remarkably improved, leading to an enhanced power factor, with a high level of ≈29 µW cm−1 K−2 at 873 K. Lattice thermal conductivity is sharply reduced, approaching the amorphous limit, through the strong phonon scattering induced by multiple scales of Cu2Te nanoprecipitates, as well as Cu interstitials, leading to a high ZT value of ≈1.55 at 873 K.",

keywords = "SnTe, interstitials, resonant levels",

author = "Fengkai Guo and Bo Cui and Huiyuan Geng and Yang Zhang and Haijun Wu and Qian Zhang and Bo Yu and Pennycook, \{Stephen J.\} and Wei Cai and Jiehe Sui",

note = "Publisher Copyright: {\textcopyright} 2019 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim",

year = "2019",

month = sep,

day = "1",

doi = "10.1002/smll.201902493",

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T1 - Simultaneous Boost of Power Factor and Figure-of-Merit in In–Cu Codoped SnTe

AU - Guo, Fengkai

AU - Cui, Bo

AU - Geng, Huiyuan

AU - Zhang, Yang

AU - Wu, Haijun

AU - Zhang, Qian

AU - Yu, Bo

AU - Pennycook, Stephen J.

AU - Cai, Wei

AU - Sui, Jiehe

PY - 2019/9/1

Y1 - 2019/9/1

N2 - Significantly enhanced thermoelectric performance is achieved for eco-friendly SnTe by a coorperative effect between a dopant resonant energy level and interstitial defects. By manipulating the band structure through indium doping, the Seebeck coefficient is remarkably improved, leading to an enhanced power factor, with a high level of ≈29 µW cm−1 K−2 at 873 K. Lattice thermal conductivity is sharply reduced, approaching the amorphous limit, through the strong phonon scattering induced by multiple scales of Cu2Te nanoprecipitates, as well as Cu interstitials, leading to a high ZT value of ≈1.55 at 873 K.

AB - Significantly enhanced thermoelectric performance is achieved for eco-friendly SnTe by a coorperative effect between a dopant resonant energy level and interstitial defects. By manipulating the band structure through indium doping, the Seebeck coefficient is remarkably improved, leading to an enhanced power factor, with a high level of ≈29 µW cm−1 K−2 at 873 K. Lattice thermal conductivity is sharply reduced, approaching the amorphous limit, through the strong phonon scattering induced by multiple scales of Cu2Te nanoprecipitates, as well as Cu interstitials, leading to a high ZT value of ≈1.55 at 873 K.

KW - SnTe

KW - interstitials

KW - resonant levels

UR - https://www.scopus.com/pages/publications/85069915019

U2 - 10.1002/smll.201902493

DO - 10.1002/smll.201902493

M3 - 文章

C2 - 31338961

AN - SCOPUS:85069915019

SN - 1613-6810

VL - 15

JO - Small

JF - Small

IS - 36

M1 - 1902493

ER -

Simultaneous Boost of Power Factor and Figure-of-Merit in In–Cu Codoped SnTe

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Keywords

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