Simulation Study of Single-Event Burnout in GaN MISFET with Schottky Element

Ying Wang; Xin Xing Fei; Xue Wu; Xingji Li; Jianqun Yang; Mengtian Bao; Fei Cao

doi:10.1109/TED.2020.3027533

Simulation Study of Single-Event Burnout in GaN MISFET with Schottky Element

Ying Wang^*
, Xin Xing Fei
, Xue Wu
, Xingji Li^*
, Jianqun Yang
, Mengtian Bao
, Fei Cao

^*Corresponding author for this work

School of Materials Science and Engineering

Hangzhou Dianzi University
College of Information and Communication Engineering, Harbin Engineering University
National Key Laboratory of Analog Integrated Circuits

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

In this article, we investigate a new hardened GaN MISFET with an integrated Schottky contact (SC-MISFET). The new device architecture significantly improves the single-event burnout (SEB) characteristics. Compared to the field plate conventional GaN MISFET (FPC-MISFET), the Schottky metal can extract a larger number of holes, which are generated by heavy-ion irradiation. In addition, the number of carriers involved in the impact ionization process is substantially reduced. These features enable the new hardened structure to achieve a better overall SEB characteristic. After heavy-ion irradiation, the SEB threshold voltages of devices with conventional and hardened structures are 520 and 710 V, respectively.

Original language	English
Article number	9219222
Pages (from-to)	5466-5471
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	67
Issue number	12
DOIs	https://doi.org/10.1109/TED.2020.3027533
State	Published - Dec 2020

Keywords

MISFET
SEB threshold voltage
Schottky contact (SC)
single-event burnout (SEB)
technology computer aided design (TCAD)

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10.1109/TED.2020.3027533

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@article{45128db845184da38312891017bd5642,

title = "Simulation Study of Single-Event Burnout in GaN MISFET with Schottky Element",

abstract = "In this article, we investigate a new hardened GaN MISFET with an integrated Schottky contact (SC-MISFET). The new device architecture significantly improves the single-event burnout (SEB) characteristics. Compared to the field plate conventional GaN MISFET (FPC-MISFET), the Schottky metal can extract a larger number of holes, which are generated by heavy-ion irradiation. In addition, the number of carriers involved in the impact ionization process is substantially reduced. These features enable the new hardened structure to achieve a better overall SEB characteristic. After heavy-ion irradiation, the SEB threshold voltages of devices with conventional and hardened structures are 520 and 710 V, respectively.",

keywords = "MISFET, SEB threshold voltage, Schottky contact (SC), single-event burnout (SEB), technology computer aided design (TCAD)",

author = "Ying Wang and Fei, \{Xin Xing\} and Xue Wu and Xingji Li and Jianqun Yang and Mengtian Bao and Fei Cao",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2020",

month = dec,

doi = "10.1109/TED.2020.3027533",

language = "英语",

volume = "67",

pages = "5466--5471",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - Simulation Study of Single-Event Burnout in GaN MISFET with Schottky Element

AU - Wang, Ying

AU - Fei, Xin Xing

AU - Wu, Xue

AU - Li, Xingji

AU - Yang, Jianqun

AU - Bao, Mengtian

AU - Cao, Fei

PY - 2020/12

Y1 - 2020/12

N2 - In this article, we investigate a new hardened GaN MISFET with an integrated Schottky contact (SC-MISFET). The new device architecture significantly improves the single-event burnout (SEB) characteristics. Compared to the field plate conventional GaN MISFET (FPC-MISFET), the Schottky metal can extract a larger number of holes, which are generated by heavy-ion irradiation. In addition, the number of carriers involved in the impact ionization process is substantially reduced. These features enable the new hardened structure to achieve a better overall SEB characteristic. After heavy-ion irradiation, the SEB threshold voltages of devices with conventional and hardened structures are 520 and 710 V, respectively.

AB - In this article, we investigate a new hardened GaN MISFET with an integrated Schottky contact (SC-MISFET). The new device architecture significantly improves the single-event burnout (SEB) characteristics. Compared to the field plate conventional GaN MISFET (FPC-MISFET), the Schottky metal can extract a larger number of holes, which are generated by heavy-ion irradiation. In addition, the number of carriers involved in the impact ionization process is substantially reduced. These features enable the new hardened structure to achieve a better overall SEB characteristic. After heavy-ion irradiation, the SEB threshold voltages of devices with conventional and hardened structures are 520 and 710 V, respectively.

KW - MISFET

KW - SEB threshold voltage

KW - Schottky contact (SC)

KW - single-event burnout (SEB)

KW - technology computer aided design (TCAD)

UR - https://www.scopus.com/pages/publications/85097416736

U2 - 10.1109/TED.2020.3027533

DO - 10.1109/TED.2020.3027533

M3 - 文章

AN - SCOPUS:85097416736

SN - 0018-9383

VL - 67

SP - 5466

EP - 5471

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 12

M1 - 9219222

ER -

Simulation Study of Single-Event Burnout in GaN MISFET with Schottky Element

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Keywords

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