@inproceedings{38d6ad1c25644819b673000c2815b2f7,
title = "Simulation study of dimensional effect on bipolar resistive random access memory (RRAM)",
abstract = "The dependency of the RRAM device electrical parameters such as set voltage, reset current and resistance on the RRAM cell dimensional scalability is investigated with Monte Carlo simulation to optimize the power consumption of bipolar RRAM. It is found in the simulation that the switching process in bipolar RRAM is related to the cell dimension in the sub-nm region in terms of its horizontal length. The suppressing effect of existing conducting filament is also discussed. With optimal cell size sufficient initial resistance and a low forming voltage will be achieved, accelerating the feasibility of the high-density low-power RRAM.",
keywords = "RRAM, electric parameter and computational simulation, power consumption",
author = "Kai Liu and Kailiang Zhang and Fang Wang and Jinshi Zhao and Jun Wei",
year = "2013",
doi = "10.1109/INEC.2013.6466031",
language = "英语",
isbn = "9781467348416",
series = "Proceedings - Winter Simulation Conference",
pages = "306--308",
booktitle = "Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013",
note = "2013 IEEE 5th International Nanoelectronics Conference, INEC 2013 ; Conference date: 02-01-2013 Through 04-01-2013",
}