Simulation Based Method to Characterize Parasitic Parameters in a Double Pulse Test System

Jianzhen Qu; Xue Yuan; Qianfan Zhang; Shumei Cui

doi:10.1109/ICIEA48937.2020.9248242

Simulation Based Method to Characterize Parasitic Parameters in a Double Pulse Test System

Jianzhen Qu
, Xue Yuan
, Qianfan Zhang
, Shumei Cui

School of Electrical Engineering and Automation

Harbin Institute of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

As the switching speed of power semiconductor devices increases gradually, the influence of parasitic parameters on the system electromagnetic compatibility increases significantly. The simulation based characterization of parasitic parameters is very important to predict their influences in power converters during the initial design phase. In this paper, parasitic parameters of the components in a double pulse test system are extracted in Q3D and validated with measurements. A comprehensive circuit co-simulation model is then developed to determine the major parasitic parameters that affect the switching voltage spikes and the common mode currents in the IGBT module. The proposed characterization procedure and co-simulation techniques can also be applied confidently to other complex power converters.

Original language	English
Title of host publication	Proceedings of the 15th IEEE Conference on Industrial Electronics and Applications, ICIEA 2020
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	898-903
Number of pages	6
ISBN (Electronic)	9781728151694
DOIs	https://doi.org/10.1109/ICIEA48937.2020.9248242
State	Published - 9 Nov 2020
Event	15th IEEE Conference on Industrial Electronics and Applications, ICIEA 2020 - Virtual, Kristiansand, Norway Duration: 9 Nov 2020 → 13 Nov 2020

Publication series

Name	Proceedings of the 15th IEEE Conference on Industrial Electronics and Applications, ICIEA 2020

Conference

Conference	15th IEEE Conference on Industrial Electronics and Applications, ICIEA 2020
Country/Territory	Norway
City	Virtual, Kristiansand
Period	9/11/20 → 13/11/20

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

common mode (CM) current
double pulse test (DPT)
electromagnetic interference (EMI)
laminated busbar

Access to Document

10.1109/ICIEA48937.2020.9248242

Cite this

Qu, J., Yuan, X., Zhang, Q., & Cui, S. (2020). Simulation Based Method to Characterize Parasitic Parameters in a Double Pulse Test System. In Proceedings of the 15th IEEE Conference on Industrial Electronics and Applications, ICIEA 2020 (pp. 898-903). Article 9248242 (Proceedings of the 15th IEEE Conference on Industrial Electronics and Applications, ICIEA 2020). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICIEA48937.2020.9248242

Qu, Jianzhen ; Yuan, Xue ; Zhang, Qianfan et al. / Simulation Based Method to Characterize Parasitic Parameters in a Double Pulse Test System. Proceedings of the 15th IEEE Conference on Industrial Electronics and Applications, ICIEA 2020. Institute of Electrical and Electronics Engineers Inc., 2020. pp. 898-903 (Proceedings of the 15th IEEE Conference on Industrial Electronics and Applications, ICIEA 2020).

@inproceedings{0f858dac574041f09b1d69a1d71005df,

title = "Simulation Based Method to Characterize Parasitic Parameters in a Double Pulse Test System",

abstract = "As the switching speed of power semiconductor devices increases gradually, the influence of parasitic parameters on the system electromagnetic compatibility increases significantly. The simulation based characterization of parasitic parameters is very important to predict their influences in power converters during the initial design phase. In this paper, parasitic parameters of the components in a double pulse test system are extracted in Q3D and validated with measurements. A comprehensive circuit co-simulation model is then developed to determine the major parasitic parameters that affect the switching voltage spikes and the common mode currents in the IGBT module. The proposed characterization procedure and co-simulation techniques can also be applied confidently to other complex power converters.",

keywords = "common mode (CM) current, double pulse test (DPT), electromagnetic interference (EMI), laminated busbar",

author = "Jianzhen Qu and Xue Yuan and Qianfan Zhang and Shumei Cui",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 15th IEEE Conference on Industrial Electronics and Applications, ICIEA 2020 ; Conference date: 09-11-2020 Through 13-11-2020",

year = "2020",

month = nov,

day = "9",

doi = "10.1109/ICIEA48937.2020.9248242",

language = "英语",

series = "Proceedings of the 15th IEEE Conference on Industrial Electronics and Applications, ICIEA 2020",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "898--903",

booktitle = "Proceedings of the 15th IEEE Conference on Industrial Electronics and Applications, ICIEA 2020",

address = "美国",

}

Qu, J, Yuan, X, Zhang, Q & Cui, S 2020, Simulation Based Method to Characterize Parasitic Parameters in a Double Pulse Test System. in Proceedings of the 15th IEEE Conference on Industrial Electronics and Applications, ICIEA 2020., 9248242, Proceedings of the 15th IEEE Conference on Industrial Electronics and Applications, ICIEA 2020, Institute of Electrical and Electronics Engineers Inc., pp. 898-903, 15th IEEE Conference on Industrial Electronics and Applications, ICIEA 2020, Virtual, Kristiansand, Norway, 9/11/20. https://doi.org/10.1109/ICIEA48937.2020.9248242

Simulation Based Method to Characterize Parasitic Parameters in a Double Pulse Test System. / Qu, Jianzhen; Yuan, Xue; Zhang, Qianfan et al.
Proceedings of the 15th IEEE Conference on Industrial Electronics and Applications, ICIEA 2020. Institute of Electrical and Electronics Engineers Inc., 2020. p. 898-903 9248242 (Proceedings of the 15th IEEE Conference on Industrial Electronics and Applications, ICIEA 2020).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Simulation Based Method to Characterize Parasitic Parameters in a Double Pulse Test System

AU - Qu, Jianzhen

AU - Yuan, Xue

AU - Zhang, Qianfan

AU - Cui, Shumei

PY - 2020/11/9

Y1 - 2020/11/9

N2 - As the switching speed of power semiconductor devices increases gradually, the influence of parasitic parameters on the system electromagnetic compatibility increases significantly. The simulation based characterization of parasitic parameters is very important to predict their influences in power converters during the initial design phase. In this paper, parasitic parameters of the components in a double pulse test system are extracted in Q3D and validated with measurements. A comprehensive circuit co-simulation model is then developed to determine the major parasitic parameters that affect the switching voltage spikes and the common mode currents in the IGBT module. The proposed characterization procedure and co-simulation techniques can also be applied confidently to other complex power converters.

AB - As the switching speed of power semiconductor devices increases gradually, the influence of parasitic parameters on the system electromagnetic compatibility increases significantly. The simulation based characterization of parasitic parameters is very important to predict their influences in power converters during the initial design phase. In this paper, parasitic parameters of the components in a double pulse test system are extracted in Q3D and validated with measurements. A comprehensive circuit co-simulation model is then developed to determine the major parasitic parameters that affect the switching voltage spikes and the common mode currents in the IGBT module. The proposed characterization procedure and co-simulation techniques can also be applied confidently to other complex power converters.

KW - common mode (CM) current

KW - double pulse test (DPT)

KW - electromagnetic interference (EMI)

KW - laminated busbar

UR - https://www.scopus.com/pages/publications/85097551732

U2 - 10.1109/ICIEA48937.2020.9248242

DO - 10.1109/ICIEA48937.2020.9248242

M3 - 会议稿件

AN - SCOPUS:85097551732

T3 - Proceedings of the 15th IEEE Conference on Industrial Electronics and Applications, ICIEA 2020

SP - 898

EP - 903

BT - Proceedings of the 15th IEEE Conference on Industrial Electronics and Applications, ICIEA 2020

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 15th IEEE Conference on Industrial Electronics and Applications, ICIEA 2020

Y2 - 9 November 2020 through 13 November 2020

ER -

Qu J, Yuan X, Zhang Q , Cui S. Simulation Based Method to Characterize Parasitic Parameters in a Double Pulse Test System. In Proceedings of the 15th IEEE Conference on Industrial Electronics and Applications, ICIEA 2020. Institute of Electrical and Electronics Engineers Inc. 2020. p. 898-903. 9248242. (Proceedings of the 15th IEEE Conference on Industrial Electronics and Applications, ICIEA 2020). doi: 10.1109/ICIEA48937.2020.9248242

Simulation Based Method to Characterize Parasitic Parameters in a Double Pulse Test System

Abstract

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Keywords

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