Simulation and Testing of the Radiation Performance of SiC Particles with Different Distribution Morphologies

Based on Mie scattering theory, fractal theory, the generalized multiparticle Mie model and the attenuated total reflectance infrared spectroscopy method, this paper aimed to explore the influence of different distribution morphologies of semiconductor nanoparticles on their radiation properties. The results revealed that (1) the symmetry and fluctuation amplitude of the scattering direction of the SiC elementary particles, with a diameter of 100 nm, and the cluster particles were related to the wavelength, particle size and agglomeration state. (2) The particle size distribution had a significant effect on the spectral extinction performance of the SiC particles, especially when λ > 10 μm, which can be greatly strengthened by increasing the proportion of large‐scale particles. (3) The influence of SiC particle clusters on their spectral extinction was directly related to the cluster size and wavelength. When λ < 10 μm, small‐scale cluster particles showed lower extinction perfor-mances; however, the absorption and scattering factors increased with the increase in cluster size while λ > 10 μm, and the extinction performance significantly improved. In summary, the quantitative changes in the microscale and structure, as well as the distribution states, had a significant impact on the infrared spectral characteristics of the particles, and we expect to adjust the particle size distribution to obtain desired radiation properties.