@inproceedings{ef1345d0f9174211bfbc7cd8513595a7,
title = "Simulation and parameters optimization of high gain silicon micro-pixel avalanche photodiode",
abstract = "In this paper, the silicon avalanche photodiode (Si-APD) size in micron, which was comprised of separate layer of absorption charge and multiplication (SACM) has been studied. The influence of different thicknesses and different doping concentration of the absorption, charge and multiplication layer on the electric field distribution, current-voltage characteristic and breakdown voltage were simulated and analyzed respectively. The structural parameters optimization has be done with the simulation results. The results show that the better gain and low bias voltage can be achieved with layer thicknesses in micro/nano-sized, which can give a high gain of 106 and low bias voltage of 127V. Also the fabrication process conditions has been given.",
keywords = "Avalanche gain, Avalanche photodiode, SACM, Si-APD",
author = "Fangkui Sun and Huaiqi Gu and Zhiwei Wang and Lixue Chen",
year = "2012",
doi = "10.1117/12.999907",
language = "英语",
isbn = "9780819493101",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Optoelectronic Devices and Integration IV",
note = "Optoelectronic Devices and Integration IV ; Conference date: 05-11-2012 Through 07-11-2012",
}