SiC MOSFET Crosstalk Analysis and Suppression Circuit Design

As high-precision manufacture developed rapidly, silicon-based devices have been unable to meet the performance indicators of the system and gradually replaced by wide bandgap semiconductors with high breakdown voltage and high junction temperature. However, the high-speed switching characteristics of wide-bandgap power devices such as SiC MOSFETs also bring new problems to the drive control of the system. For instance, the crosstalk phenomenon can cause the SiC MOSFET to be mis-turned on or reverse breakdown, which will seriously affect the system stability. This article will focus on the crosstalk problem in the circuit unfolds. Firstly, this paper analyzes the generation principle of positive and negative crosstalk in bridge circuit structure. Secondly, this paper presents a new type of drive circuit after summarizing and comparing existing crosstalk suppression methods. Finally, the correctness and effectiveness of the proposed circuit are verified from the following aspects: theoretical analysis, LTspice simulation and experiments.