Si diffusion behavior during laser welding-brazing of Al alloy and Ti alloy with Al-12Si filler wire

Shu hai CHEN; Li qun LI; Yan bin CHEN; De jian LIU

doi:10.1016/S1003-6326(09)60098-4

Si diffusion behavior during laser welding-brazing of Al alloy and Ti alloy with Al-12Si filler wire

Shu hai CHEN^*
, Li qun LI
, Yan bin CHEN
, De jian LIU

^*Corresponding author for this work

School of Materials Science and Engineering

Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

105 Scopus citations

Abstract

In laser welding-brazing of Al alloy (5A06) and Ti alloy (Ti-6Al-4V) with rectangular CO₂ laser spot and with Al-12Si filler wire, element Si enriches at the interface between Ti substrate and the filler metal. It is found that the Si diffusion behavior has a significant effect on the formation of interfacial intermetallic compounds. To analyze the Si diffusion behavior, a model for the prediction of the chemical potential for ternary alloy was established. According to the calculated results of the influence of the element content and temperature in Ti-Al-Si system on Si chemical potential, the diffusion behavior of Si element was analyzed for Ti dissolution and melting mode, which presents a good agreement with the experimental data. Further, formation mechanism of the interfacial intermetllic compound was clarified.

Original language	English
Pages (from-to)	64-70
Number of pages	7
Journal	Transactions of Nonferrous Metals Society of China (English Edition)
Volume	20
Issue number	1
DOIs	https://doi.org/10.1016/S1003-6326(09)60098-4
State	Published - Jan 2010

Keywords

chemical potential
diffusion behavior
interfacial reaction
laser welding-brazing

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10.1016/S1003-6326(09)60098-4

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title = "Si diffusion behavior during laser welding-brazing of Al alloy and Ti alloy with Al-12Si filler wire",

abstract = "In laser welding-brazing of Al alloy (5A06) and Ti alloy (Ti-6Al-4V) with rectangular CO2 laser spot and with Al-12Si filler wire, element Si enriches at the interface between Ti substrate and the filler metal. It is found that the Si diffusion behavior has a significant effect on the formation of interfacial intermetallic compounds. To analyze the Si diffusion behavior, a model for the prediction of the chemical potential for ternary alloy was established. According to the calculated results of the influence of the element content and temperature in Ti-Al-Si system on Si chemical potential, the diffusion behavior of Si element was analyzed for Ti dissolution and melting mode, which presents a good agreement with the experimental data. Further, formation mechanism of the interfacial intermetllic compound was clarified.",

keywords = "chemical potential, diffusion behavior, interfacial reaction, laser welding-brazing",

author = "CHEN, \{Shu hai\} and LI, \{Li qun\} and CHEN, \{Yan bin\} and LIU, \{De jian\}",

year = "2010",

month = jan,

doi = "10.1016/S1003-6326(09)60098-4",

language = "英语",

volume = "20",

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journal = "Transactions of Nonferrous Metals Society of China (English Edition)",

issn = "1003-6326",

publisher = "Nonferrous Metals Society of China",

number = "1",

}

TY - JOUR

T1 - Si diffusion behavior during laser welding-brazing of Al alloy and Ti alloy with Al-12Si filler wire

AU - CHEN, Shu hai

AU - LI, Li qun

AU - CHEN, Yan bin

AU - LIU, De jian

PY - 2010/1

Y1 - 2010/1

N2 - In laser welding-brazing of Al alloy (5A06) and Ti alloy (Ti-6Al-4V) with rectangular CO2 laser spot and with Al-12Si filler wire, element Si enriches at the interface between Ti substrate and the filler metal. It is found that the Si diffusion behavior has a significant effect on the formation of interfacial intermetallic compounds. To analyze the Si diffusion behavior, a model for the prediction of the chemical potential for ternary alloy was established. According to the calculated results of the influence of the element content and temperature in Ti-Al-Si system on Si chemical potential, the diffusion behavior of Si element was analyzed for Ti dissolution and melting mode, which presents a good agreement with the experimental data. Further, formation mechanism of the interfacial intermetllic compound was clarified.

AB - In laser welding-brazing of Al alloy (5A06) and Ti alloy (Ti-6Al-4V) with rectangular CO2 laser spot and with Al-12Si filler wire, element Si enriches at the interface between Ti substrate and the filler metal. It is found that the Si diffusion behavior has a significant effect on the formation of interfacial intermetallic compounds. To analyze the Si diffusion behavior, a model for the prediction of the chemical potential for ternary alloy was established. According to the calculated results of the influence of the element content and temperature in Ti-Al-Si system on Si chemical potential, the diffusion behavior of Si element was analyzed for Ti dissolution and melting mode, which presents a good agreement with the experimental data. Further, formation mechanism of the interfacial intermetllic compound was clarified.

KW - chemical potential

KW - diffusion behavior

KW - interfacial reaction

KW - laser welding-brazing

UR - https://www.scopus.com/pages/publications/76049106168

U2 - 10.1016/S1003-6326(09)60098-4

DO - 10.1016/S1003-6326(09)60098-4

M3 - 文章

AN - SCOPUS:76049106168

SN - 1003-6326

VL - 20

SP - 64

EP - 70

JO - Transactions of Nonferrous Metals Society of China (English Edition)

JF - Transactions of Nonferrous Metals Society of China (English Edition)

IS - 1

ER -

Si diffusion behavior during laser welding-brazing of Al alloy and Ti alloy with Al-12Si filler wire

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Keywords

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