Shear strain-induced anisotropic domain evolution in mixed-phase BiFeO                         3                          epitaxial films

Han Xu; Zuhuang Chen; Xiaoyi Zhang; Yongqi Dong; Bin Hong; Jiangtao Zhao; Lang Chen; Sujit Das; Chen Gao; Changgan Zeng; Haidan Wen; Zhenlin Luo

doi:10.1063/1.5080709

Shear strain-induced anisotropic domain evolution in mixed-phase BiFeO ₃ epitaxial films

Han Xu
, Zuhuang Chen
, Xiaoyi Zhang
, Yongqi Dong
, Bin Hong
, Jiangtao Zhao
, Lang Chen
, Sujit Das
, Chen Gao
, Changgan Zeng
, Haidan Wen
, Zhenlin Luo^*

^*Corresponding author for this work

University of Science and Technology of China
University of California at Berkeley
Argonne National Laboratory
Southern University of Science and Technology

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Understanding and controlling the domain evolution under external stimuli in multiferroic thin films is critical to realizing nanoelectronic devices, including for non-volatile memory, data storage, sensors, and optoelectronics. In this article, we studied the shear-strain effect on the domain evolution with temperature in highly strained BiFeO ₃ thin films on rhombohedral LaAlO ₃ substrates using a high-resolution synchrotron X-ray diffraction three dimensional-reciprocal space mapping (3D-RSM) technique. The results revealed significant biaxial, anisotropic, evolution behaviors of the mixed-phase (M _C + R′/T′ phases) BiFeO ₃ ferroelectric domains along the in-plane [100] and [010] axes. These biaxial, anisotropic, evolution behaviors were attributed to the shear-strain-modulated transition pathways of the mixed-phase ferroelectric domains. This viewpoint was further verified in the BiFeO ₃ /LaSrAlO ₄ (001) system in which no anisotropic evolution behaviors of the mixed-phase domains were found. This work sheds light on the quantitative analysis of domain evolution in multi-domain systems and demonstrates that the shear-strain effect could act as an effective tool to manipulate the domain behavior and control novel functionalities of ferroelectric thin films.

Original language	English
Article number	025114
Journal	AIP Advances
Volume	9
Issue number	2
DOIs	https://doi.org/10.1063/1.5080709
State	Published - 1 Feb 2019
Externally published	Yes

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Xu, H., Chen, Z., Zhang, X., Dong, Y., Hong, B., Zhao, J., Chen, L., Das, S., Gao, C., Zeng, C., Wen, H., & Luo, Z. (2019). Shear strain-induced anisotropic domain evolution in mixed-phase BiFeO ₃ epitaxial films AIP Advances, 9(2), Article 025114. https://doi.org/10.1063/1.5080709

@article{9de01ddb3e0e48a98b9114e83c6a96ae,

title = " Shear strain-induced anisotropic domain evolution in mixed-phase BiFeO 3 epitaxial films ",

abstract = " Understanding and controlling the domain evolution under external stimuli in multiferroic thin films is critical to realizing nanoelectronic devices, including for non-volatile memory, data storage, sensors, and optoelectronics. In this article, we studied the shear-strain effect on the domain evolution with temperature in highly strained BiFeO 3 thin films on rhombohedral LaAlO 3 substrates using a high-resolution synchrotron X-ray diffraction three dimensional-reciprocal space mapping (3D-RSM) technique. The results revealed significant biaxial, anisotropic, evolution behaviors of the mixed-phase (M C + R′/T′ phases) BiFeO 3 ferroelectric domains along the in-plane [100] and [010] axes. These biaxial, anisotropic, evolution behaviors were attributed to the shear-strain-modulated transition pathways of the mixed-phase ferroelectric domains. This viewpoint was further verified in the BiFeO 3 /LaSrAlO 4 (001) system in which no anisotropic evolution behaviors of the mixed-phase domains were found. This work sheds light on the quantitative analysis of domain evolution in multi-domain systems and demonstrates that the shear-strain effect could act as an effective tool to manipulate the domain behavior and control novel functionalities of ferroelectric thin films.",

author = "Han Xu and Zuhuang Chen and Xiaoyi Zhang and Yongqi Dong and Bin Hong and Jiangtao Zhao and Lang Chen and Sujit Das and Chen Gao and Changgan Zeng and Haidan Wen and Zhenlin Luo",

note = "Publisher Copyright: {\textcopyright} 2019 Author(s).",

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doi = "10.1063/1.5080709",

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TY - JOUR

T1 - Shear strain-induced anisotropic domain evolution in mixed-phase BiFeO 3 epitaxial films

AU - Xu, Han

AU - Chen, Zuhuang

AU - Zhang, Xiaoyi

AU - Dong, Yongqi

AU - Hong, Bin

AU - Zhao, Jiangtao

AU - Chen, Lang

AU - Das, Sujit

AU - Gao, Chen

AU - Zeng, Changgan

AU - Wen, Haidan

AU - Luo, Zhenlin

PY - 2019/2/1

Y1 - 2019/2/1

N2 - Understanding and controlling the domain evolution under external stimuli in multiferroic thin films is critical to realizing nanoelectronic devices, including for non-volatile memory, data storage, sensors, and optoelectronics. In this article, we studied the shear-strain effect on the domain evolution with temperature in highly strained BiFeO 3 thin films on rhombohedral LaAlO 3 substrates using a high-resolution synchrotron X-ray diffraction three dimensional-reciprocal space mapping (3D-RSM) technique. The results revealed significant biaxial, anisotropic, evolution behaviors of the mixed-phase (M C + R′/T′ phases) BiFeO 3 ferroelectric domains along the in-plane [100] and [010] axes. These biaxial, anisotropic, evolution behaviors were attributed to the shear-strain-modulated transition pathways of the mixed-phase ferroelectric domains. This viewpoint was further verified in the BiFeO 3 /LaSrAlO 4 (001) system in which no anisotropic evolution behaviors of the mixed-phase domains were found. This work sheds light on the quantitative analysis of domain evolution in multi-domain systems and demonstrates that the shear-strain effect could act as an effective tool to manipulate the domain behavior and control novel functionalities of ferroelectric thin films.

AB - Understanding and controlling the domain evolution under external stimuli in multiferroic thin films is critical to realizing nanoelectronic devices, including for non-volatile memory, data storage, sensors, and optoelectronics. In this article, we studied the shear-strain effect on the domain evolution with temperature in highly strained BiFeO 3 thin films on rhombohedral LaAlO 3 substrates using a high-resolution synchrotron X-ray diffraction three dimensional-reciprocal space mapping (3D-RSM) technique. The results revealed significant biaxial, anisotropic, evolution behaviors of the mixed-phase (M C + R′/T′ phases) BiFeO 3 ferroelectric domains along the in-plane [100] and [010] axes. These biaxial, anisotropic, evolution behaviors were attributed to the shear-strain-modulated transition pathways of the mixed-phase ferroelectric domains. This viewpoint was further verified in the BiFeO 3 /LaSrAlO 4 (001) system in which no anisotropic evolution behaviors of the mixed-phase domains were found. This work sheds light on the quantitative analysis of domain evolution in multi-domain systems and demonstrates that the shear-strain effect could act as an effective tool to manipulate the domain behavior and control novel functionalities of ferroelectric thin films.

UR - https://www.scopus.com/pages/publications/85061938700

U2 - 10.1063/1.5080709

DO - 10.1063/1.5080709

M3 - 文章

AN - SCOPUS:85061938700

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JO - AIP Advances

JF - AIP Advances

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Shear strain-induced anisotropic domain evolution in mixed-phase BiFeO ₃ epitaxial films

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