Separating positive and negative magnetoresistance for polyaniline-silicon nanocomposites in variable range hopping regime

Hongbo Gu; Jiang Guo; Rakesh Sadu; Yudong Huang; Neel Haldolaarachchige; Daniel Chen; David P. Young; Suying Wei; Zhanhu Guo

doi:10.1063/1.4807787

Separating positive and negative magnetoresistance for polyaniline-silicon nanocomposites in variable range hopping regime

Hongbo Gu
, Jiang Guo
, Rakesh Sadu
, Yudong Huang
, Neel Haldolaarachchige
, Daniel Chen
, David P. Young
, Suying Wei^*
, Zhanhu Guo

^*Corresponding author for this work

Lamar University
School of Chemistry and Chemical Engineering, Harbin Institute of Technology
Louisiana State University

Research output: Contribution to journal › Article › peer-review

39 Scopus citations

Abstract

This letter reports on unique room temperature organic magnetoresistance (OMAR) in the disordered polyaniline/silicon polymer nanocomposites in the variable range hopping regime. A transition from positive to negative OMAR was observed around 5.5 T. The theoretical analysis revealed that both wave-function shrinkage model and forward interference model contributed to the positive OMAR and only forward interference model was responsible for the observed negative OMAR. The obtained positive OMAR is well explained by the introduced localization length a₀, density of states at the Fermi level (N(E_F)), and average hopping length R_hop; and the negative OMAR is interpreted by the quantum interference effect.

Original language	English
Article number	212403
Journal	Applied Physics Letters
Volume	102
Issue number	21
DOIs	https://doi.org/10.1063/1.4807787
State	Published - 27 May 2013
Externally published	Yes

Access to Document

10.1063/1.4807787

Cite this

@article{279d38517f9a468da11234b617762d8d,

title = "Separating positive and negative magnetoresistance for polyaniline-silicon nanocomposites in variable range hopping regime",

abstract = "This letter reports on unique room temperature organic magnetoresistance (OMAR) in the disordered polyaniline/silicon polymer nanocomposites in the variable range hopping regime. A transition from positive to negative OMAR was observed around 5.5 T. The theoretical analysis revealed that both wave-function shrinkage model and forward interference model contributed to the positive OMAR and only forward interference model was responsible for the observed negative OMAR. The obtained positive OMAR is well explained by the introduced localization length a0, density of states at the Fermi level (N(EF)), and average hopping length Rhop; and the negative OMAR is interpreted by the quantum interference effect.",

author = "Hongbo Gu and Jiang Guo and Rakesh Sadu and Yudong Huang and Neel Haldolaarachchige and Daniel Chen and Young, \{David P.\} and Suying Wei and Zhanhu Guo",

year = "2013",

month = may,

day = "27",

doi = "10.1063/1.4807787",

language = "英语",

volume = "102",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "21",

}

TY - JOUR

T1 - Separating positive and negative magnetoresistance for polyaniline-silicon nanocomposites in variable range hopping regime

AU - Gu, Hongbo

AU - Guo, Jiang

AU - Sadu, Rakesh

AU - Huang, Yudong

AU - Haldolaarachchige, Neel

AU - Chen, Daniel

AU - Young, David P.

AU - Wei, Suying

AU - Guo, Zhanhu

PY - 2013/5/27

Y1 - 2013/5/27

N2 - This letter reports on unique room temperature organic magnetoresistance (OMAR) in the disordered polyaniline/silicon polymer nanocomposites in the variable range hopping regime. A transition from positive to negative OMAR was observed around 5.5 T. The theoretical analysis revealed that both wave-function shrinkage model and forward interference model contributed to the positive OMAR and only forward interference model was responsible for the observed negative OMAR. The obtained positive OMAR is well explained by the introduced localization length a0, density of states at the Fermi level (N(EF)), and average hopping length Rhop; and the negative OMAR is interpreted by the quantum interference effect.

AB - This letter reports on unique room temperature organic magnetoresistance (OMAR) in the disordered polyaniline/silicon polymer nanocomposites in the variable range hopping regime. A transition from positive to negative OMAR was observed around 5.5 T. The theoretical analysis revealed that both wave-function shrinkage model and forward interference model contributed to the positive OMAR and only forward interference model was responsible for the observed negative OMAR. The obtained positive OMAR is well explained by the introduced localization length a0, density of states at the Fermi level (N(EF)), and average hopping length Rhop; and the negative OMAR is interpreted by the quantum interference effect.

UR - https://www.scopus.com/pages/publications/84879107795

U2 - 10.1063/1.4807787

DO - 10.1063/1.4807787

M3 - 文章

AN - SCOPUS:84879107795

SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

M1 - 212403

ER -

Separating positive and negative magnetoresistance for polyaniline-silicon nanocomposites in variable range hopping regime

Abstract

Access to Document

Other files and links

Fingerprint

Cite this