Sensitivity Analysis of Process Parameters on Deposition Quality and Multi-Objective Prediction in Ion-Assisted Electron Beam Evaporation of Ta₂O₅ Films

Tantalum pentoxide (Ta₂O₅) films deposited on fused silica substrates are critical components of high-power laser systems. Ion-assisted electron beam evaporation (IAD-EBE) is the mainstream technique for fabricating Ta₂O₅ films. However, it commonly requires extensive experimental efforts for deposition quality optimization, while each coating cycle is extremely time-consuming. To solve this issue, this work establishes a dataset targeting the surface roughness (Rq) and refractive index (n) of Ta₂O₅ films using atomic force microscopy, as well as ellipsometer and deposition experiments. Influence of assisting ion source beam voltage (V)/current (I) and Ar (Q₁)/O₂ (Q₂) flow rate on the n and Rq of Ta₂O₅ films are analyzed. Combining energy-field mechanism analysis with a Bayesian optimization approach (PI-BO), both deposition quality prediction and feature analysis of process parameters are achieved. The determination coefficient/mean absolute error for the prediction models of n and Rq reach 0.927/0.013 nm and 0.821/0.049 nm, respectively. Based on sensitivity analysis, the weight factors of V, I, Q₁, and Q₂ affecting n/Rq of Ta₂O₅ films are determined to be 0.616/0.274, 0.199/0.144, 0.113/0.582, and 0.072/0.000. V and Q₂ are identified as the core factors for regulating deposition quality. The optimal ranges for V and Q₂ are 600~700 V and 70~80 sccm, respectively. This study proposes a PI-BO method for predicting Rq and n of Ta₂O₅ films under small-data conditions, while determining the preferred parameter ranges and their sensitivity weight factors. These findings provide effective theoretical support and technical guidance for IAD-EBE strategy design and optimization of optical films in high-power laser systems.