Semiconductor quantum dot lasers epitaxially grown on silicon with low linewidth enhancement factor

J. Duan; H. Huang; D. Jung; Z. Zhang; J. Norman; J. E. Bowers; F. Grillot

doi:10.1063/1.5025879

Semiconductor quantum dot lasers epitaxially grown on silicon with low linewidth enhancement factor

J. Duan
, H. Huang
, D. Jung
, Z. Zhang
, J. Norman
, J. E. Bowers
, F. Grillot

Research output: Contribution to journal › Article › peer-review

83 Scopus citations

Abstract

This work reports on the ultra-low linewidth enhancement factor (α_H-factor) of semiconductor quantum dot lasers epitaxially grown on silicon. Owing to the low density of threading dislocations and resultant high gain, an α_H value of 0.13 that is rather independent of the temperature range (288 K-308 K) is measured. Above the laser threshold, the linewidth enhancement factor does not increase extensively with the bias current which is very promising for the realization of future integrated circuits including high performance laser sources.

Original language	English
Article number	251111
Journal	Applied Physics Letters
Volume	112
Issue number	25
DOIs	https://doi.org/10.1063/1.5025879
State	Published - 18 Jun 2018
Externally published	Yes

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title = "Semiconductor quantum dot lasers epitaxially grown on silicon with low linewidth enhancement factor",

abstract = "This work reports on the ultra-low linewidth enhancement factor (αH-factor) of semiconductor quantum dot lasers epitaxially grown on silicon. Owing to the low density of threading dislocations and resultant high gain, an αH value of 0.13 that is rather independent of the temperature range (288 K-308 K) is measured. Above the laser threshold, the linewidth enhancement factor does not increase extensively with the bias current which is very promising for the realization of future integrated circuits including high performance laser sources.",

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AU - Norman, J.

AU - Bowers, J. E.

AU - Grillot, F.

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AB - This work reports on the ultra-low linewidth enhancement factor (αH-factor) of semiconductor quantum dot lasers epitaxially grown on silicon. Owing to the low density of threading dislocations and resultant high gain, an αH value of 0.13 that is rather independent of the temperature range (288 K-308 K) is measured. Above the laser threshold, the linewidth enhancement factor does not increase extensively with the bias current which is very promising for the realization of future integrated circuits including high performance laser sources.

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Semiconductor quantum dot lasers epitaxially grown on silicon with low linewidth enhancement factor

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