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Semiconductor-mediated radiosensitizers: progress, challenges and perspectives

  • Harbin Institute of Technology
  • Harbin Institute of Technology
  • College of Materials Science and Chemical Engineering, Harbin Engineering University
  • School of Medicine and Health, Harbin Institute of Technology

Research output: Contribution to journalReview articlepeer-review

Abstract

Radiotherapy has become one indispensable treatment strategy for treating malignant tumors. However, the therapeutic effect of radiotherapy is limited due to the low sensitivity and large side effects of existing radiosensitizers. The rapid development of nanotechnology has created opportunities for various novel kinds of radiosensitizers with excellent radiosensitivity to sprout recently. In particular, due to the ease of modification and potential utilization capacity for a multifunctional radiotherapy platform, semiconductor radiosensitizers have attracted more and more attention. Recently, many novel semiconductor based radiosensitizers have been reported, which provides new ideas for the improvement of radiotherapy efficacy. To make further breakthroughs in semiconductor radiosensitizers, a systematic review is urgently needed and is herein provided. This review first elaborates on the principle of semiconductor induced radiosensitization, and then focuses on strategies such as doping and constructing heterojunctions to enhance the radiosensitivity of semiconductors. Next, it introduces in detail the principle and progress of different types of semiconductor radiosensitizers. Finally, challenges and perspectives of semiconductor radiosensitizers are proposed and discussed, offering guidance for future commercial applications of semiconductor radiosensitizers.

Original languageEnglish
Pages (from-to)3598-3621
Number of pages24
JournalMaterials Horizons
Volume12
Issue number11
DOIs
StatePublished - 18 Feb 2025

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