Semiconducting boron carbonitride nanostructures: Nanotubes and nanofibers

J. Yu; J. Ahn; S. F. Yoon; Q. Zhang; Rusli; B. Gan; K. Chew; M. B. Yu; X. D. Bai; E. G. Wang

doi:10.1063/1.1311953

Semiconducting boron carbonitride nanostructures: Nanotubes and nanofibers

J. Yu^*
, J. Ahn
, S. F. Yoon
, Q. Zhang
, Rusli
, B. Gan
, K. Chew
, M. B. Yu
, X. D. Bai
, E. G. Wang

^*Corresponding author for this work

Nanyang Technological University
CAS - Institute of Physics

Research output: Contribution to journal › Article › peer-review

107 Scopus citations

Abstract

Highly oriented boron carbonitride (BCN) nanostructures consisting of nanotubes and nanofibers have been synthesized by bias-assisted hot-filament chemical vapor deposition from the source gases of B₂H₆, CH₄, N₂, and H₂. It is found that the B concentration of the BCN nanostructures increases with increasing B₂H₆ in the gas mixture, and the highest B concentration is 45 at. %. Photoluminescence spectrum shows that the BCN nanostructures, identified as B_0.34C_0.42N_0.24, are semiconductors with a band gap energy of around 1.0 eV.

Original language	English
Pages (from-to)	1949-1951
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	13
DOIs	https://doi.org/10.1063/1.1311953
State	Published - 25 Sep 2000
Externally published	Yes

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title = "Semiconducting boron carbonitride nanostructures: Nanotubes and nanofibers",

abstract = "Highly oriented boron carbonitride (BCN) nanostructures consisting of nanotubes and nanofibers have been synthesized by bias-assisted hot-filament chemical vapor deposition from the source gases of B2H6, CH4, N2, and H2. It is found that the B concentration of the BCN nanostructures increases with increasing B2H6 in the gas mixture, and the highest B concentration is 45 at. \%. Photoluminescence spectrum shows that the BCN nanostructures, identified as B0.34C0.42N0.24, are semiconductors with a band gap energy of around 1.0 eV.",

author = "J. Yu and J. Ahn and Yoon, \{S. F.\} and Q. Zhang and Rusli and B. Gan and K. Chew and Yu, \{M. B.\} and Bai, \{X. D.\} and Wang, \{E. G.\}",

year = "2000",

month = sep,

day = "25",

doi = "10.1063/1.1311953",

language = "英语",

volume = "77",

pages = "1949--1951",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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}

TY - JOUR

T1 - Semiconducting boron carbonitride nanostructures

T2 - Nanotubes and nanofibers

AU - Yu, J.

AU - Ahn, J.

AU - Yoon, S. F.

AU - Zhang, Q.

AU - Rusli,

AU - Gan, B.

AU - Chew, K.

AU - Yu, M. B.

AU - Bai, X. D.

AU - Wang, E. G.

PY - 2000/9/25

Y1 - 2000/9/25

N2 - Highly oriented boron carbonitride (BCN) nanostructures consisting of nanotubes and nanofibers have been synthesized by bias-assisted hot-filament chemical vapor deposition from the source gases of B2H6, CH4, N2, and H2. It is found that the B concentration of the BCN nanostructures increases with increasing B2H6 in the gas mixture, and the highest B concentration is 45 at. %. Photoluminescence spectrum shows that the BCN nanostructures, identified as B0.34C0.42N0.24, are semiconductors with a band gap energy of around 1.0 eV.

AB - Highly oriented boron carbonitride (BCN) nanostructures consisting of nanotubes and nanofibers have been synthesized by bias-assisted hot-filament chemical vapor deposition from the source gases of B2H6, CH4, N2, and H2. It is found that the B concentration of the BCN nanostructures increases with increasing B2H6 in the gas mixture, and the highest B concentration is 45 at. %. Photoluminescence spectrum shows that the BCN nanostructures, identified as B0.34C0.42N0.24, are semiconductors with a band gap energy of around 1.0 eV.

UR - https://www.scopus.com/pages/publications/0347243668

U2 - 10.1063/1.1311953

DO - 10.1063/1.1311953

M3 - 文章

AN - SCOPUS:0347243668

SN - 0003-6951

VL - 77

SP - 1949

EP - 1951

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

ER -

Semiconducting boron carbonitride nanostructures: Nanotubes and nanofibers

Abstract

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