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Self-Recovery Tolerance Latch Design Based on the Radiation Mechanism

  • Qiang Li
  • , Xiaohui Su
  • , Jing Guo*
  • , Chunhua Qi*
  • *Corresponding author for this work
  • North University of China
  • Chinese Academy of Sciences

Research output: Contribution to journalArticlepeer-review

Abstract

Digital latches are becoming more sensitive to Multiple-Node Upsets (MNUs) due to lower supply voltage and higher integration density of devices. The hardening technique based on using multiple C-Elements (CEs) (the CE acts as an inverter if its inputs are equal to each other, otherwise holds the high-impedance output) has been used to propose the MNU tolerance latches. However, it brings important hardware overheads. Based on the radiation mechanism, this paper proposes an MNU tolerance latch with self-recovery properties to prevent Singe Node Upset (SNU) and MNU propagation in the feedback loops, and providing the smallest overheads in terms of power, delay, rising time $\text{t}_{\mathrm {r}}$ , falling time $\text{t}_{\mathrm {f}}$ and Power-Delay-Area-Product (PDAP) metric compared with the existing MNU tolerance latches.

Original languageEnglish
Article number9268098
Pages (from-to)220152-220164
Number of pages13
JournalIEEE Access
Volume8
DOIs
StatePublished - 2020

Keywords

  • Hardening
  • latch
  • radiation-induced voltage pulse
  • tolerance
  • upset

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