Self-purification model for metal-assisted chemical etching of metallurgical silicon

Xiaopeng Li; Yanjun Xiao; Chenglin Yan; Keya Zhou; Paul Tiberiu Miclea; Sylke Meyer; Stefan L. Schweizer; Alexander Sprafke; Jung Ho Lee; Ralf B. Wehrspohn

doi:10.1016/j.electacta.2014.05.048

Self-purification model for metal-assisted chemical etching of metallurgical silicon

Xiaopeng Li
, Yanjun Xiao
, Chenglin Yan
, Keya Zhou
, Paul Tiberiu Miclea
, Sylke Meyer
, Stefan L. Schweizer
, Alexander Sprafke
, Jung Ho Lee^*
, Ralf B. Wehrspohn

^*Corresponding author for this work

Max Planck Institute of Microstructure Physics
Martin Luther University Halle-Wittenberg
Hanyang University
Soochow University
Fraunhofer Center for Silicon Photovoltaics
Fraunhofer Institute for Mechanics of Materials

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Metal-assisted chemical etching (MaCE) of metallurgical-grade silicon (MG-Si) has improved the purity of MG-Si (∼99%) to close to solar-grade (∼99.9999%) by removing metal impurities during the successful preparation of porous silicon nanowires (SiNWs). A new etching principle is proposed to explain the different levels of chemical reduction between various metal impurities with pore formation during etching. This model provides chemical insights into the relationship between dissolved metal ions and pores evolved during the formation of SiNWs.

Original language	English
Pages (from-to)	476-480
Number of pages	5
Journal	Electrochimica Acta
Volume	138
DOIs	https://doi.org/10.1016/j.electacta.2014.05.048
State	Published - 20 Aug 2014
Externally published	Yes

Keywords

Metal assisted chemical etching
etching model
metallurgical silicon
purification effect
transitional metal impurity

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10.1016/j.electacta.2014.05.048

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@article{c8660cb07d394e47ab984be3e0ac8db8,

title = "Self-purification model for metal-assisted chemical etching of metallurgical silicon",

abstract = "Metal-assisted chemical etching (MaCE) of metallurgical-grade silicon (MG-Si) has improved the purity of MG-Si (∼99\%) to close to solar-grade (∼99.9999\%) by removing metal impurities during the successful preparation of porous silicon nanowires (SiNWs). A new etching principle is proposed to explain the different levels of chemical reduction between various metal impurities with pore formation during etching. This model provides chemical insights into the relationship between dissolved metal ions and pores evolved during the formation of SiNWs.",

keywords = "Metal assisted chemical etching, etching model, metallurgical silicon, purification effect, transitional metal impurity",

author = "Xiaopeng Li and Yanjun Xiao and Chenglin Yan and Keya Zhou and Miclea, \{Paul Tiberiu\} and Sylke Meyer and Schweizer, \{Stefan L.\} and Alexander Sprafke and Lee, \{Jung Ho\} and Wehrspohn, \{Ralf B.\}",

year = "2014",

month = aug,

day = "20",

doi = "10.1016/j.electacta.2014.05.048",

language = "英语",

volume = "138",

pages = "476--480",

journal = "Electrochimica Acta",

issn = "0013-4686",

publisher = "Elsevier Ltd",

}

TY - JOUR

T1 - Self-purification model for metal-assisted chemical etching of metallurgical silicon

AU - Li, Xiaopeng

AU - Xiao, Yanjun

AU - Yan, Chenglin

AU - Zhou, Keya

AU - Miclea, Paul Tiberiu

AU - Meyer, Sylke

AU - Schweizer, Stefan L.

AU - Sprafke, Alexander

AU - Lee, Jung Ho

AU - Wehrspohn, Ralf B.

PY - 2014/8/20

Y1 - 2014/8/20

N2 - Metal-assisted chemical etching (MaCE) of metallurgical-grade silicon (MG-Si) has improved the purity of MG-Si (∼99%) to close to solar-grade (∼99.9999%) by removing metal impurities during the successful preparation of porous silicon nanowires (SiNWs). A new etching principle is proposed to explain the different levels of chemical reduction between various metal impurities with pore formation during etching. This model provides chemical insights into the relationship between dissolved metal ions and pores evolved during the formation of SiNWs.

AB - Metal-assisted chemical etching (MaCE) of metallurgical-grade silicon (MG-Si) has improved the purity of MG-Si (∼99%) to close to solar-grade (∼99.9999%) by removing metal impurities during the successful preparation of porous silicon nanowires (SiNWs). A new etching principle is proposed to explain the different levels of chemical reduction between various metal impurities with pore formation during etching. This model provides chemical insights into the relationship between dissolved metal ions and pores evolved during the formation of SiNWs.

KW - Metal assisted chemical etching

KW - etching model

KW - metallurgical silicon

KW - purification effect

KW - transitional metal impurity

UR - https://www.scopus.com/pages/publications/84905010904

U2 - 10.1016/j.electacta.2014.05.048

DO - 10.1016/j.electacta.2014.05.048

M3 - 文章

AN - SCOPUS:84905010904

SN - 0013-4686

VL - 138

SP - 476

EP - 480

JO - Electrochimica Acta

JF - Electrochimica Acta

ER -

Self-purification model for metal-assisted chemical etching of metallurgical silicon

Abstract

Keywords

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