Self-Powered Photodetector of Bi0.5Sb1.5Te3/Si with Ultrafast Response

Yujuan Pei; Shuo Gong; Miaoran Kang; Hanxu Zhang; Weilong Deng; Qiang Fu; Yu Sui; Xianjie Wang; Bo Song

doi:10.1021/acsaelm.5c02467

Self-Powered Photodetector of Bi_0.5Sb_1.5Te₃/Si with Ultrafast Response

Yujuan Pei
, Shuo Gong
, Miaoran Kang
, Hanxu Zhang
, Weilong Deng
, Qiang Fu
, Yu Sui
, Xianjie Wang^*
, Bo Song^*

^*Corresponding author for this work

School of Physics, Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Bi_0.5Sb_1.5Te₃ (BST) has attracted much attention owing to its special physical properties, including strong surface carrier mobility and narrow band gap. In this study, the photoelectric performance of the photodetector based on BST/Si heterojunctions was systematically investigated. Our photodetector accomplishes a large self-powered position sensitivity (405 mV/mm) and a detectivity of 3.1 × 10¹¹ Jones. The relaxation times of the lateral photovoltaic voltage reached 0.106 μs. The BST/Si heterojunction achieves broad-spectrum photodetection covering a spectrum from visible light to the infrared wavelength range, with a photoelectrical bandwidth exceeding 15 kHz. This research demonstrates the considerable potential of ultrafast response photodetectors for self-powered position-sensitive detectors, imaging, and object recognition in future.

Original language	English
Pages (from-to)	1757-1764
Number of pages	8
Journal	ACS Applied Electronic Materials
Volume	8
Issue number	4
DOIs	https://doi.org/10.1021/acsaelm.5c02467
State	Published - 24 Feb 2026

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

BiSbTethin films
lateral photovoltaic effect
photodetectors
position sensitive detectors
ultrafast relaxation

Access to Document

10.1021/acsaelm.5c02467

Cite this

@article{f04f01d172604c09b89ee9baf4bdb10a,

title = "Self-Powered Photodetector of Bi0.5Sb1.5Te3/Si with Ultrafast Response",

abstract = "Bi0.5Sb1.5Te3 (BST) has attracted much attention owing to its special physical properties, including strong surface carrier mobility and narrow band gap. In this study, the photoelectric performance of the photodetector based on BST/Si heterojunctions was systematically investigated. Our photodetector accomplishes a large self-powered position sensitivity (405 mV/mm) and a detectivity of 3.1 × 1011 Jones. The relaxation times of the lateral photovoltaic voltage reached 0.106 μs. The BST/Si heterojunction achieves broad-spectrum photodetection covering a spectrum from visible light to the infrared wavelength range, with a photoelectrical bandwidth exceeding 15 kHz. This research demonstrates the considerable potential of ultrafast response photodetectors for self-powered position-sensitive detectors, imaging, and object recognition in future.",

keywords = "BiSbTethin films, lateral photovoltaic effect, photodetectors, position sensitive detectors, ultrafast relaxation",

author = "Yujuan Pei and Shuo Gong and Miaoran Kang and Hanxu Zhang and Weilong Deng and Qiang Fu and Yu Sui and Xianjie Wang and Bo Song",

note = "Publisher Copyright: {\textcopyright} 2026 American Chemical Society",

year = "2026",

month = feb,

day = "24",

doi = "10.1021/acsaelm.5c02467",

language = "英语",

volume = "8",

pages = "1757--1764",

journal = "ACS Applied Electronic Materials",

issn = "2637-6113",

publisher = "American Chemical Society",

number = "4",

}

TY - JOUR

T1 - Self-Powered Photodetector of Bi0.5Sb1.5Te3/Si with Ultrafast Response

AU - Pei, Yujuan

AU - Gong, Shuo

AU - Kang, Miaoran

AU - Zhang, Hanxu

AU - Deng, Weilong

AU - Fu, Qiang

AU - Sui, Yu

AU - Wang, Xianjie

AU - Song, Bo

PY - 2026/2/24

Y1 - 2026/2/24

N2 - Bi0.5Sb1.5Te3 (BST) has attracted much attention owing to its special physical properties, including strong surface carrier mobility and narrow band gap. In this study, the photoelectric performance of the photodetector based on BST/Si heterojunctions was systematically investigated. Our photodetector accomplishes a large self-powered position sensitivity (405 mV/mm) and a detectivity of 3.1 × 1011 Jones. The relaxation times of the lateral photovoltaic voltage reached 0.106 μs. The BST/Si heterojunction achieves broad-spectrum photodetection covering a spectrum from visible light to the infrared wavelength range, with a photoelectrical bandwidth exceeding 15 kHz. This research demonstrates the considerable potential of ultrafast response photodetectors for self-powered position-sensitive detectors, imaging, and object recognition in future.

AB - Bi0.5Sb1.5Te3 (BST) has attracted much attention owing to its special physical properties, including strong surface carrier mobility and narrow band gap. In this study, the photoelectric performance of the photodetector based on BST/Si heterojunctions was systematically investigated. Our photodetector accomplishes a large self-powered position sensitivity (405 mV/mm) and a detectivity of 3.1 × 1011 Jones. The relaxation times of the lateral photovoltaic voltage reached 0.106 μs. The BST/Si heterojunction achieves broad-spectrum photodetection covering a spectrum from visible light to the infrared wavelength range, with a photoelectrical bandwidth exceeding 15 kHz. This research demonstrates the considerable potential of ultrafast response photodetectors for self-powered position-sensitive detectors, imaging, and object recognition in future.

KW - BiSbTethin films

KW - lateral photovoltaic effect

KW - photodetectors

KW - position sensitive detectors

KW - ultrafast relaxation

UR - https://www.scopus.com/pages/publications/105030924592

U2 - 10.1021/acsaelm.5c02467

DO - 10.1021/acsaelm.5c02467

M3 - 文章

AN - SCOPUS:105030924592

SN - 2637-6113

VL - 8

SP - 1757

EP - 1764

JO - ACS Applied Electronic Materials

JF - ACS Applied Electronic Materials

IS - 4

ER -