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Room-temperature solution-processed amorphous NbOx as an electron transport layer in high-efficiency photovoltaics

  • Chunyang Zhang
  • , Yantao Shi*
  • , Shi Wang
  • , Qingshun Dong
  • , Yulin Feng
  • , Liduo Wang
  • , Kai Wang
  • , Yingying Shao
  • , Yang Liu
  • , Shufeng Wang
  • *Corresponding author for this work
  • Dalian University of Technology
  • Tsinghua University
  • Peking University

Research output: Contribution to journalArticlepeer-review

Abstract

Preparation of high-quality amorphous oxide semiconductor (AOS) films by wet chemical routes at low temperature (<100 °C) remains difficult. Here, we conducted systematic research for the low-temperature fabrication of AOS by a solution route using amorphous NbOx as an example. Perovskite solar cells (PSCs) based on a solution-processed amorphous ETL obtain a high power conversion efficiency of up to 19.09%, which is much higher than that of the PSCs using solution-processed AOS ETLs and even compare favourably with those using vacuum-processed ETLs.

Original languageEnglish
Pages (from-to)17882-17888
Number of pages7
JournalJournal of Materials Chemistry A
Volume6
Issue number37
DOIs
StatePublished - 2018
Externally publishedYes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 7 - Affordable and Clean Energy
    SDG 7 Affordable and Clean Energy

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