Room-temperature Si-SiN wafer bonding by nano-adhesion layer method

Ryuichi Kondou; Chenxi Wang; Tadatomo Suga

doi:10.1109/ECTC.2010.5490947

Room-temperature Si-SiN wafer bonding by nano-adhesion layer method

Ryuichi Kondou^*
, Chenxi Wang
, Tadatomo Suga

^*Corresponding author for this work

The University of Tokyo
Japan Science and Technology Agency

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

9 Scopus citations

Abstract

Nano-Adhesion layer bonding method is proposed for heterogeneous wafer bonding at room temperature. The wafer surface is smooth, clean, and activated by nano-adhesion layer method which sputter cleaning and deposition Fe simultaneously. Si-Si and Si-SiN wafers were directly bonded at room temperature and the bonding strength was increased by optimizing Fe composition ratio on the Si surfaces. We analyzed atomic structure and bonding states at bonding interface by using cross-sectional HRTEM, STEM and EELS and discussed nano-adhesion layer formation, bonding interface structure, and bonding mechanisms. Our results show that bonding interfaces are composed of Si/FeSi/Si and Si/FeSi/FeSiN/SiN of Si-Si and Si-SiN, respectively.

Original language	English
Title of host publication	2010 Proceedings 60th Electronic Components and Technology Conference, ECTC 2010
Pages	357-362
Number of pages	6
DOIs	https://doi.org/10.1109/ECTC.2010.5490947
State	Published - 2010
Externally published	Yes
Event	60th Electronic Components and Technology Conference, ECTC 2010 - Las Vegas, NV, United States Duration: 1 Jun 2010 → 4 Jun 2010

Publication series

Name	Proceedings - Electronic Components and Technology Conference
ISSN (Print)	0569-5503

Conference

Conference	60th Electronic Components and Technology Conference, ECTC 2010
Country/Territory	United States
City	Las Vegas, NV
Period	1/06/10 → 4/06/10

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10.1109/ECTC.2010.5490947

Cite this

@inproceedings{e2e6fdc3e7c74cd782b3539c55390744,

title = "Room-temperature Si-SiN wafer bonding by nano-adhesion layer method",

abstract = "Nano-Adhesion layer bonding method is proposed for heterogeneous wafer bonding at room temperature. The wafer surface is smooth, clean, and activated by nano-adhesion layer method which sputter cleaning and deposition Fe simultaneously. Si-Si and Si-SiN wafers were directly bonded at room temperature and the bonding strength was increased by optimizing Fe composition ratio on the Si surfaces. We analyzed atomic structure and bonding states at bonding interface by using cross-sectional HRTEM, STEM and EELS and discussed nano-adhesion layer formation, bonding interface structure, and bonding mechanisms. Our results show that bonding interfaces are composed of Si/FeSi/Si and Si/FeSi/FeSiN/SiN of Si-Si and Si-SiN, respectively.",

author = "Ryuichi Kondou and Chenxi Wang and Tadatomo Suga",

year = "2010",

doi = "10.1109/ECTC.2010.5490947",

language = "英语",

isbn = "9781424464104",

series = "Proceedings - Electronic Components and Technology Conference",

pages = "357--362",

booktitle = "2010 Proceedings 60th Electronic Components and Technology Conference, ECTC 2010",

note = "60th Electronic Components and Technology Conference, ECTC 2010 ; Conference date: 01-06-2010 Through 04-06-2010",

}

Kondou, R, Wang, C & Suga, T 2010, Room-temperature Si-SiN wafer bonding by nano-adhesion layer method. in 2010 Proceedings 60th Electronic Components and Technology Conference, ECTC 2010., 5490947, Proceedings - Electronic Components and Technology Conference, pp. 357-362, 60th Electronic Components and Technology Conference, ECTC 2010, Las Vegas, NV, United States, 1/06/10. https://doi.org/10.1109/ECTC.2010.5490947

Room-temperature Si-SiN wafer bonding by nano-adhesion layer method. / Kondou, Ryuichi; Wang, Chenxi; Suga, Tadatomo.
2010 Proceedings 60th Electronic Components and Technology Conference, ECTC 2010. 2010. p. 357-362 5490947 (Proceedings - Electronic Components and Technology Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Room-temperature Si-SiN wafer bonding by nano-adhesion layer method

AU - Kondou, Ryuichi

AU - Wang, Chenxi

AU - Suga, Tadatomo

PY - 2010

Y1 - 2010

N2 - Nano-Adhesion layer bonding method is proposed for heterogeneous wafer bonding at room temperature. The wafer surface is smooth, clean, and activated by nano-adhesion layer method which sputter cleaning and deposition Fe simultaneously. Si-Si and Si-SiN wafers were directly bonded at room temperature and the bonding strength was increased by optimizing Fe composition ratio on the Si surfaces. We analyzed atomic structure and bonding states at bonding interface by using cross-sectional HRTEM, STEM and EELS and discussed nano-adhesion layer formation, bonding interface structure, and bonding mechanisms. Our results show that bonding interfaces are composed of Si/FeSi/Si and Si/FeSi/FeSiN/SiN of Si-Si and Si-SiN, respectively.

AB - Nano-Adhesion layer bonding method is proposed for heterogeneous wafer bonding at room temperature. The wafer surface is smooth, clean, and activated by nano-adhesion layer method which sputter cleaning and deposition Fe simultaneously. Si-Si and Si-SiN wafers were directly bonded at room temperature and the bonding strength was increased by optimizing Fe composition ratio on the Si surfaces. We analyzed atomic structure and bonding states at bonding interface by using cross-sectional HRTEM, STEM and EELS and discussed nano-adhesion layer formation, bonding interface structure, and bonding mechanisms. Our results show that bonding interfaces are composed of Si/FeSi/Si and Si/FeSi/FeSiN/SiN of Si-Si and Si-SiN, respectively.

UR - https://www.scopus.com/pages/publications/77955219116

U2 - 10.1109/ECTC.2010.5490947

DO - 10.1109/ECTC.2010.5490947

M3 - 会议稿件

AN - SCOPUS:77955219116

SN - 9781424464104

T3 - Proceedings - Electronic Components and Technology Conference

SP - 357

EP - 362

BT - 2010 Proceedings 60th Electronic Components and Technology Conference, ECTC 2010

T2 - 60th Electronic Components and Technology Conference, ECTC 2010

Y2 - 1 June 2010 through 4 June 2010

ER -

Room-temperature Si-SiN wafer bonding by nano-adhesion layer method

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