TY - GEN
T1 - Room-temperature Si-Si and Si-SiN wafer bonding
AU - Kondou, Ryuichi
AU - Wang, Chenxi
AU - Suga, Tadatomo
PY - 2010
Y1 - 2010
N2 - Nano-adhesion layer bonding method is proposed for heterogeneous wafer bonding at room temperature. In this method, the wafer surfaces are sputtered by Ar-ion and deposited with Fe nano-adhesion layers simultaneously. Si-Si and Si-SiN wafers are thus directly bonded at room temperature. The bonding strength is increased by optimizing Fe composition ratio on the Si surfaces. The microstructure and chemical states of the bonding interface are characterized using cross-sectional HRTEM, STEM and EELS. Moreover, our results demostrate that the nano-adhesion layer is formed across the bonding interfaces, which are composed of Si/FeSi/Si and Si/FeSi/FeSiN/SiN for Si-Si and Si-SiN bonding interfaces, respectively.
AB - Nano-adhesion layer bonding method is proposed for heterogeneous wafer bonding at room temperature. In this method, the wafer surfaces are sputtered by Ar-ion and deposited with Fe nano-adhesion layers simultaneously. Si-Si and Si-SiN wafers are thus directly bonded at room temperature. The bonding strength is increased by optimizing Fe composition ratio on the Si surfaces. The microstructure and chemical states of the bonding interface are characterized using cross-sectional HRTEM, STEM and EELS. Moreover, our results demostrate that the nano-adhesion layer is formed across the bonding interfaces, which are composed of Si/FeSi/Si and Si/FeSi/FeSiN/SiN for Si-Si and Si-SiN bonding interfaces, respectively.
UR - https://www.scopus.com/pages/publications/79251552009
U2 - 10.1109/CPMTSYMPJ.2010.5679530
DO - 10.1109/CPMTSYMPJ.2010.5679530
M3 - 会议稿件
AN - SCOPUS:79251552009
SN - 9781424475940
T3 - 2010 IEEE CPMT Symposium Japan, ICSJ10
BT - 2010 IEEE CPMT Symposium Japan, ICSJ10
T2 - 2010 IEEE CPMT Symposium Japan, ICSJ10
Y2 - 24 August 2010 through 26 August 2010
ER -