Roles of grain boundaries on the semiconductor to metal phase transition of VO2 thin films

Haiyan Wang; Jie Jian; Wenrui Zhang; Clement Jacob; Aiping Chen; Han Wang; Jijie Huang

doi:10.1063/1.4930831

Roles of grain boundaries on the semiconductor to metal phase transition of VO₂ thin films

Haiyan Wang^*
, Jie Jian
, Wenrui Zhang
, Clement Jacob
, Aiping Chen
, Han Wang
, Jijie Huang

^*Corresponding author for this work

Texas A&M University

Research output: Contribution to journal › Article › peer-review

62 Scopus citations

Abstract

Vanadium dioxide (VO₂) thin films with controlled grain sizes are deposited on amorphous glass substrates by pulsed laser deposition. The grain boundaries (GBs) are found as the dominating defects in the thin films. The semiconductor to metal transition (SMT) properties of VO₂ thin films are characterized and correlated to the GB density. The VO₂ films with lower GB density exhibit a sharper SMT with a larger transition amplitude. A high resolution TEM study at GB area reveals the disordered atomic structures along the boundaries and the distorted crystal lattices near the boundaries. The VO₂ SMT amplitude and sharpness could be directly related to these defects at and near the boundaries.

Original language	English
Article number	102105
Journal	Applied Physics Letters
Volume	107
Issue number	10
DOIs	https://doi.org/10.1063/1.4930831
State	Published - 7 Sep 2015
Externally published	Yes

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title = "Roles of grain boundaries on the semiconductor to metal phase transition of VO2 thin films",

abstract = "Vanadium dioxide (VO2) thin films with controlled grain sizes are deposited on amorphous glass substrates by pulsed laser deposition. The grain boundaries (GBs) are found as the dominating defects in the thin films. The semiconductor to metal transition (SMT) properties of VO2 thin films are characterized and correlated to the GB density. The VO2 films with lower GB density exhibit a sharper SMT with a larger transition amplitude. A high resolution TEM study at GB area reveals the disordered atomic structures along the boundaries and the distorted crystal lattices near the boundaries. The VO2 SMT amplitude and sharpness could be directly related to these defects at and near the boundaries.",

author = "Haiyan Wang and Jie Jian and Wenrui Zhang and Clement Jacob and Aiping Chen and Han Wang and Jijie Huang",

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T1 - Roles of grain boundaries on the semiconductor to metal phase transition of VO2 thin films

AU - Wang, Haiyan

AU - Jian, Jie

AU - Zhang, Wenrui

AU - Jacob, Clement

AU - Chen, Aiping

AU - Wang, Han

AU - Huang, Jijie

PY - 2015/9/7

Y1 - 2015/9/7

N2 - Vanadium dioxide (VO2) thin films with controlled grain sizes are deposited on amorphous glass substrates by pulsed laser deposition. The grain boundaries (GBs) are found as the dominating defects in the thin films. The semiconductor to metal transition (SMT) properties of VO2 thin films are characterized and correlated to the GB density. The VO2 films with lower GB density exhibit a sharper SMT with a larger transition amplitude. A high resolution TEM study at GB area reveals the disordered atomic structures along the boundaries and the distorted crystal lattices near the boundaries. The VO2 SMT amplitude and sharpness could be directly related to these defects at and near the boundaries.

AB - Vanadium dioxide (VO2) thin films with controlled grain sizes are deposited on amorphous glass substrates by pulsed laser deposition. The grain boundaries (GBs) are found as the dominating defects in the thin films. The semiconductor to metal transition (SMT) properties of VO2 thin films are characterized and correlated to the GB density. The VO2 films with lower GB density exhibit a sharper SMT with a larger transition amplitude. A high resolution TEM study at GB area reveals the disordered atomic structures along the boundaries and the distorted crystal lattices near the boundaries. The VO2 SMT amplitude and sharpness could be directly related to these defects at and near the boundaries.

UR - https://www.scopus.com/pages/publications/84941340685

U2 - 10.1063/1.4930831

DO - 10.1063/1.4930831

M3 - 文章

AN - SCOPUS:84941340685

SN - 0003-6951

VL - 107

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

M1 - 102105

ER -

Roles of grain boundaries on the semiconductor to metal phase transition of VO₂ thin films

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