Skip to main navigation Skip to search Skip to main content

Robust magnetoresistance in TaAs2 under pressure up to about 37 GPa

  • Hongyuan Wang
  • , Cuiying Pei
  • , Hao Su
  • , Zhenhai Yu*
  • , Mingtao Li
  • , Wei Xia
  • , Xiaolei Liu
  • , Qifeng Liang
  • , Jinggeng Zhao
  • , Chunyin Zhou
  • , Na Yu
  • , Xia Wang
  • , Zhiqiang Zou
  • , Lin Wang
  • , Yanpeng Qi
  • , Yanfeng Guo
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The extremely large magnetoresistance (XMR) in nonmagnetic semimetals has inspired growing interest owing to both intriguing physics and potential applications. We report the results of synchrotron X-ray diffraction and electrical transport measurements on TaAs2 under pressure up to ∼37 GPa, which revealed an anisotropic compression of the unit cell, formation of unusual As-As bonds above 9.5 GPa, and enhancement of metallicity. Interestingly, the MR of TaAs2 under pressure changed gently, which at 1.7 GPa is 96.6% and at 36.6 GPa is still 36.7%. The almost robust MR under pressure could be related to the nearly stable electronic structure unveiled by the ab initio calculations. The discovery would expand the potential use of XMR even under high pressure.

Original languageEnglish
Article number122403
JournalApplied Physics Letters
Volume115
Issue number12
DOIs
StatePublished - 16 Sep 2019

Fingerprint

Dive into the research topics of 'Robust magnetoresistance in TaAs2 under pressure up to about 37 GPa'. Together they form a unique fingerprint.

Cite this