Abstract
Boron-based emitters exhibiting thermally activated delayed fluorescence (TADF) nature have emerged as promising guests for organic light-emitting diodes (OLEDs). However, balancing the trade-off between the small singlet-triplet energy gap (ΔEST) and the high oscillator strength (f) remains a significant challenge. This study demonstrates a rational molecular design strategy for high-performance TADF emitters by integrating BOO/BOS/BSS acceptors and a benzo[5,6][1,4]oxazino[2,3,4-kl]phenoxazine (NO) donor into a rigid framework. Systematic modulation of bridging atoms and peripheral tert-butyl functionalization fine-tuned the excited-state properties, yielding broad emission color tenability from blue-green (498 nm) to orange (572 nm). Theoretical calculations reveal effective spatial separation of frontier molecular orbitals with maintained overlap on the central benzene ring, balancing a small ΔEST (0.07–0.23 eV) and a high ƒ (0.1728–0.1911). The introduction of tert-butyl groups increases the horizontal dipole ratio from 61% in BNO4 to 77–78% in the other three derivatives. Among the designed emitters, TBNSO3 exhibits the smallest ΔEST (0.07 eV) due to symmetry-breaking charge transfer, facilitating efficient reverse intersystem crossing. The corresponding OLED achieves a maximum external quantum efficiency (EQEmax) of 35.1%, representing state-of-the-art performance among non-sensitized boron-based devices.
| Original language | English |
|---|---|
| Article number | e03072 |
| Journal | Advanced Optical Materials |
| Volume | 14 |
| Issue number | 6 |
| DOIs | |
| State | Published - 9 Feb 2026 |
Keywords
- boron-based emitter
- non-sensitized OLED
- organic light-emitting diodes
- thermally activated delayed fluorescence
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