TY - GEN
T1 - Response linearity and time drift of polysilicon nanofilm resistance for piezoresistive effect
AU - Liu, Xiaowei
AU - Shi, Changzhi
AU - Chuai, Rongyan
AU - Chen, Weiping
AU - Li, Jinfeng
PY - 2008
Y1 - 2008
N2 - Investigations on the piezoresistive effect of polysilicon nanofilms (PSNFs) have not been presented, since it is considered that their piezoresistive properties can become worse with film thickness decreasing. However, our experimental results indicated that the PSNFs (∼100nm in thickness, even thinner) had a high gauge factor (>30) and low temperature coefficients of resistance and gauge factor, suited for sensing applications. In order to study the effect of preparation parameters on the response linearity and time drift of the PSNF resistance, PSNFs with different doping concentration were deposited by LPCVD to fabricate sensing resistances. The film microstructure was characterized by SEM, TEM and XRD. The film resistivity and resistance change rates under different loading strains were measured. Based on the modified trap model, a conclusion was drawn that the response linearity and time drift of resistances were strongly depended on the carrier occupation level of trap states at grain boundaries. The conclusions are significant to improve the accuracy and reliability of piezoresistive sensors.
AB - Investigations on the piezoresistive effect of polysilicon nanofilms (PSNFs) have not been presented, since it is considered that their piezoresistive properties can become worse with film thickness decreasing. However, our experimental results indicated that the PSNFs (∼100nm in thickness, even thinner) had a high gauge factor (>30) and low temperature coefficients of resistance and gauge factor, suited for sensing applications. In order to study the effect of preparation parameters on the response linearity and time drift of the PSNF resistance, PSNFs with different doping concentration were deposited by LPCVD to fabricate sensing resistances. The film microstructure was characterized by SEM, TEM and XRD. The film resistivity and resistance change rates under different loading strains were measured. Based on the modified trap model, a conclusion was drawn that the response linearity and time drift of resistances were strongly depended on the carrier occupation level of trap states at grain boundaries. The conclusions are significant to improve the accuracy and reliability of piezoresistive sensors.
KW - Piezoresistive effect
KW - Polysilicon nanofilm
KW - Response linearity
KW - Time drift
KW - Trap model
UR - https://www.scopus.com/pages/publications/52649133492
U2 - 10.1109/INEC.2008.4585441
DO - 10.1109/INEC.2008.4585441
M3 - 会议稿件
AN - SCOPUS:52649133492
SN - 9781424415731
T3 - 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
SP - 78
EP - 82
BT - 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
T2 - 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
Y2 - 24 March 2008 through 27 March 2008
ER -