Research on the Full Temperature Range Characteristics of IGBT

Tianlin Sun; Chengyang Lin; Mingcheng Ma; Dianguo Xu

doi:10.30420/566131015

Research on the Full Temperature Range Characteristics of IGBT

Tianlin Sun
, Chengyang Lin
, Mingcheng Ma
, Dianguo Xu^*

^*Corresponding author for this work

School of Electrical Engineering and Automation

Harbin Institute of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

IGBT is a commonly used power semiconductor de-vice that is widely used in high voltage, high current, and high frequency power electronic systems. However, the temperature of the IGBT varies significantly during repeated switching, which can affect its electrical characteristics and lead to failure or fatigue effects. To optimize its drive circuit and evaluate the reliability of the IGBT, it is necessary to study its electrical characteristics under working conditions across the entire temperature range and monitor its junction temperature. The junction temperature can be indirectly obtained using the temperature sensitive parameter (TSP) method, and the automatic testing platform proposed in this paper can provide data on various electrical characteristics and status parameters of the IGBT across the entire temperature range, which serves as a reference for the TSP method.

Original language	English
Title of host publication	PCIM Asia 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Conference Proceedings
Publisher	VDE Verlag GmbH
Pages	90-96
Number of pages	7
ISBN (Electronic)	9783800761326
DOIs	https://doi.org/10.30420/566131015
State	Published - 2023
Event	2023 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Asia 2023 - Shanghai, China Duration: 29 Aug 2023 → 31 Aug 2023

Publication series

Name	PCIM Asia 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Conference Proceedings

Conference

Conference	2023 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Asia 2023
Country/Territory	China
City	Shanghai
Period	29/08/23 → 31/08/23

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

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10.30420/566131015

Cite this

Sun, T., Lin, C., Ma, M., & Xu, D. (2023). Research on the Full Temperature Range Characteristics of IGBT. In PCIM Asia 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Conference Proceedings (pp. 90-96). (PCIM Asia 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Conference Proceedings). VDE Verlag GmbH. https://doi.org/10.30420/566131015

Sun, Tianlin ; Lin, Chengyang ; Ma, Mingcheng et al. / Research on the Full Temperature Range Characteristics of IGBT. PCIM Asia 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Conference Proceedings. VDE Verlag GmbH, 2023. pp. 90-96 (PCIM Asia 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Conference Proceedings).

@inproceedings{f623d6abfbe844479530f71a50c5af97,

title = "Research on the Full Temperature Range Characteristics of IGBT",

abstract = "IGBT is a commonly used power semiconductor de-vice that is widely used in high voltage, high current, and high frequency power electronic systems. However, the temperature of the IGBT varies significantly during repeated switching, which can affect its electrical characteristics and lead to failure or fatigue effects. To optimize its drive circuit and evaluate the reliability of the IGBT, it is necessary to study its electrical characteristics under working conditions across the entire temperature range and monitor its junction temperature. The junction temperature can be indirectly obtained using the temperature sensitive parameter (TSP) method, and the automatic testing platform proposed in this paper can provide data on various electrical characteristics and status parameters of the IGBT across the entire temperature range, which serves as a reference for the TSP method.",

author = "Tianlin Sun and Chengyang Lin and Mingcheng Ma and Dianguo Xu",

note = "Publisher Copyright: {\textcopyright} VDE VERLAG GMBH - Berlin - Offenbach.; 2023 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Asia 2023 ; Conference date: 29-08-2023 Through 31-08-2023",

year = "2023",

doi = "10.30420/566131015",

language = "英语",

series = "PCIM Asia 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Conference Proceedings",

publisher = "VDE Verlag GmbH",

pages = "90--96",

booktitle = "PCIM Asia 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Conference Proceedings",

}

Sun, T, Lin, C, Ma, M & Xu, D 2023, Research on the Full Temperature Range Characteristics of IGBT. in PCIM Asia 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Conference Proceedings. PCIM Asia 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Conference Proceedings, VDE Verlag GmbH, pp. 90-96, 2023 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Asia 2023, Shanghai, China, 29/08/23. https://doi.org/10.30420/566131015

Research on the Full Temperature Range Characteristics of IGBT. / Sun, Tianlin; Lin, Chengyang; Ma, Mingcheng et al.
PCIM Asia 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Conference Proceedings. VDE Verlag GmbH, 2023. p. 90-96 (PCIM Asia 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Conference Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Research on the Full Temperature Range Characteristics of IGBT

AU - Sun, Tianlin

AU - Lin, Chengyang

AU - Ma, Mingcheng

AU - Xu, Dianguo

PY - 2023

Y1 - 2023

N2 - IGBT is a commonly used power semiconductor de-vice that is widely used in high voltage, high current, and high frequency power electronic systems. However, the temperature of the IGBT varies significantly during repeated switching, which can affect its electrical characteristics and lead to failure or fatigue effects. To optimize its drive circuit and evaluate the reliability of the IGBT, it is necessary to study its electrical characteristics under working conditions across the entire temperature range and monitor its junction temperature. The junction temperature can be indirectly obtained using the temperature sensitive parameter (TSP) method, and the automatic testing platform proposed in this paper can provide data on various electrical characteristics and status parameters of the IGBT across the entire temperature range, which serves as a reference for the TSP method.

AB - IGBT is a commonly used power semiconductor de-vice that is widely used in high voltage, high current, and high frequency power electronic systems. However, the temperature of the IGBT varies significantly during repeated switching, which can affect its electrical characteristics and lead to failure or fatigue effects. To optimize its drive circuit and evaluate the reliability of the IGBT, it is necessary to study its electrical characteristics under working conditions across the entire temperature range and monitor its junction temperature. The junction temperature can be indirectly obtained using the temperature sensitive parameter (TSP) method, and the automatic testing platform proposed in this paper can provide data on various electrical characteristics and status parameters of the IGBT across the entire temperature range, which serves as a reference for the TSP method.

UR - https://www.scopus.com/pages/publications/85183456940

U2 - 10.30420/566131015

DO - 10.30420/566131015

M3 - 会议稿件

AN - SCOPUS:85183456940

T3 - PCIM Asia 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Conference Proceedings

SP - 90

EP - 96

BT - PCIM Asia 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Conference Proceedings

PB - VDE Verlag GmbH

T2 - 2023 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Asia 2023

Y2 - 29 August 2023 through 31 August 2023

ER -

Sun T, Lin C, Ma M, Xu D. Research on the Full Temperature Range Characteristics of IGBT. In PCIM Asia 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Conference Proceedings. VDE Verlag GmbH. 2023. p. 90-96. (PCIM Asia 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Conference Proceedings). doi: 10.30420/566131015

Research on the Full Temperature Range Characteristics of IGBT

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