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Research on the effect of remelting on the epitaxial growth process of single crystal superalloy

  • Gengshuo Liu
  • , Shujie Liu*
  • , Tinghong Hou
  • , jinyan Hu
  • , Guanqun Du
  • , Shuai Lv
  • , Yu Wang
  • , Weiwei Liu
  • , Tao Li
  • *Corresponding author for this work
  • Dalian University of Technology
  • Ltd.

Research output: Contribution to journalArticlepeer-review

Abstract

In this paper, the remelting process is applied to Laser Directed Energy Deposition (L-DED) to repair single crystal superalloys. The main formation modes of stray grains in single crystal epitaxial growth were analyzed, and the inhibitory effect of remelting process on stray grains in single crystal epitaxial growth using L-DED was studied. Comparative experiments between remelting and non-remelting processes have been conducted. Three process parameters in the remelting process: power, z-axis lift and cladding-remelting interval time were studied. The impact of different remelting process parameters on single crystal epitaxial growth and the formation of stray grains has been studied. Remelting has been shown to effectively prevent the formation of stray grains during the solidification of the melt pool, which are otherwise caused by the presence of unmelted powder during the powder feeding phase of the L-DED process. A cladding layer without stray grains on both sides is obtained. After remelting, the epitaxial growth structure can achieve larger cellular and columnar dendritic zones and smaller primary dendrite arms. A favorable epitaxial growth structure was obtained in this paper, under the optimized remelting process window.

Original languageEnglish
Pages (from-to)888-897
Number of pages10
JournalJournal of Materials Research and Technology
Volume31
DOIs
StatePublished - 1 Jul 2024
Externally publishedYes

Keywords

  • Epitaxial growth
  • Laser remelting
  • Laser-directed energy deposition

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