TY - GEN
T1 - Research on simulation of Cu/SiO2 hybrid bonding process and interface failure mechanism by Finite Element Analysis
AU - Wang, Haozhong
AU - Chen, Hongtao
AU - Xiang, Junshan
AU - Yang, Xiaofeng
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - Cu/SiO2 hybrid bonding technology is proposed as a solution for the increasing demand of 3D packaging for higher I/O density and higher bandwidth applications. In this paper, a numerical approach to investigate the stress distribution of fine-pitch die-to-die hybrid bonding (D2D-HB) is proposed. The Finite Element Analysis (FEA) tool is used to build the model of the bonding process of D2D-HB. The influence of design parameters and conditions on the evolution of the stress on the Cu-Cu bonding interface and the dielectric layer interface during the bonding process is investigated. The results show that, the peak pressure on the Cu-Cu interface and the peak tensile force on the SiO2-SiO2 interface can reach up to 85.26 MPa and 183.37 MPa during heating stage, respectively. During cooling stage, the pressure on the Cu-Cu interface changes into tensile force, and the tensile force on the SiO2-SiO2 interface changes into pressure. In addition, the simulation results of the Cu-Cu bonding area are also displayed and discussed. For all the D2D-HB design studied in this research, up to 97.5% of Cu bonding area could be obtained. The simulation results will provide not only theoretical support for hybrid bonding technology.
AB - Cu/SiO2 hybrid bonding technology is proposed as a solution for the increasing demand of 3D packaging for higher I/O density and higher bandwidth applications. In this paper, a numerical approach to investigate the stress distribution of fine-pitch die-to-die hybrid bonding (D2D-HB) is proposed. The Finite Element Analysis (FEA) tool is used to build the model of the bonding process of D2D-HB. The influence of design parameters and conditions on the evolution of the stress on the Cu-Cu bonding interface and the dielectric layer interface during the bonding process is investigated. The results show that, the peak pressure on the Cu-Cu interface and the peak tensile force on the SiO2-SiO2 interface can reach up to 85.26 MPa and 183.37 MPa during heating stage, respectively. During cooling stage, the pressure on the Cu-Cu interface changes into tensile force, and the tensile force on the SiO2-SiO2 interface changes into pressure. In addition, the simulation results of the Cu-Cu bonding area are also displayed and discussed. For all the D2D-HB design studied in this research, up to 97.5% of Cu bonding area could be obtained. The simulation results will provide not only theoretical support for hybrid bonding technology.
KW - 3D Packaging
KW - Cu Dishing
KW - Finite Element Analysis
KW - Hybrid Bonding
KW - Reliability
UR - https://www.scopus.com/pages/publications/85191715868
U2 - 10.1109/ICEPT59018.2023.10492426
DO - 10.1109/ICEPT59018.2023.10492426
M3 - 会议稿件
AN - SCOPUS:85191715868
T3 - 2023 24th International Conference on Electronic Packaging Technology, ICEPT 2023
BT - 2023 24th International Conference on Electronic Packaging Technology, ICEPT 2023
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 24th International Conference on Electronic Packaging Technology, ICEPT 2023
Y2 - 8 August 2023 through 11 August 2023
ER -